Oxygen getters for activation of group v dopants in ii-vi semiconductor materials

Abstract

Disclosed herein are the use of materials that have high affinity for oxygen, “oxygen getters” (e.g. Al), in conjunction with group V dopants (e.g. As) in II-VI materials (e.g. CdTe, Cd(Se)Te), that enable p-type doping by reducing group V oxides found in as-grown II-VI materials, thereby freeing up the anionic form of the Group V element.

Dependencies are inferred from the claim text.