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US 12,575,136 B2Granted
Transistor
AssigneeSamsung Electronics Co., Ltd.
InventorsSangwook Kim, Kyung-Eun Byun, Keunwook Shin, Moonil Jung, Euntae Kim, Jeeeun Yang, Kwanghee Lee
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Abstract
A transistor includes an oxide semiconductor layer, a source electrode and a drain electrode disposed spaced apart from each other on the oxide semiconductor layer, a gate electrode spaced apart from the oxide semiconductor layer, a gate insulating layer disposed between the oxide semiconductor layer and the gate electrode, and a graphene layer disposed between the gate electrode and the gate insulating layer and doped with a metal.
Claims20
A transistor comprising:
- an oxide semiconductor layer;
- a source electrode and a drain electrode spaced apart from each other on the oxide semiconductor layer;
- a gate electrode spaced apart from the oxide semiconductor layer;
- a gate insulating layer between the oxide semiconductor layer and the gate electrode;
- and
- a graphene layer between the gate electrode and the gate insulating layer and doped with a metal.
3 more elements
Dependencies are inferred from the claim text.