H10D 62/8603
Binary group ii-vi materials wherein cadmium is the group ii element
Official title: {Binary Group II-VI materials wherein cadmium is the Group II element, e.g. CdTe}
H10D62/8603 (Binary group ii-vi materials wherein cadmium is the group ii element) appears on 60 US grants and 60 published applications in this corpus.
Search patents in H10D- Granted patents
- 60
- Published applications
- 60
- Assignees
- 50
- Inventors
- 163
- Latest grant
- 6 Jan 2026
Filings by year
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| 2007 | 1 | 1 |
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| 2010 | 3 | 3 |
| 2011 | 3 | 4 |
| 2012 | 4 | 3 |
| 2013 | 7 | 3 |
| 2014 | 2 | 2 |
| 2015 | 0 | 4 |
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| 2019 | 5 | 5 |
| 2020 | 4 | 6 |
| 2021 | 3 | 2 |
| 2022 | 1 | 1 |
| 2023 | 3 | 4 |
| 2024 | 0 | 0 |
| 2025 | 3 | 1 |
| 2026 | 1 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Method for manufacturing semiconductor device and semiconductor device18 Nov 2025US 12,477,829 B2Rohm Co., Ltd.
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- Semiconductor device layouts4 Mar 2025US 12,243,933 B2Mqsemi AG
- Passivated nanoparticles23 May 2023US 11,656,231 B2Tectus Corporation
- Method for manufacturing semiconductor device and semiconductor device5 Feb 2026US 2026/0040857 A1Rohm Co., Ltd.
- Simulation method for selecting optimal composition ratio of oxide semiconductor, and electronic device including the oxide semiconductor11 Dec 2025US 2025/0378228 A1Samsung Display Co., Ltd.
- Band bend controlled topological semimetal devices and methods therefor27 Jul 2023US 2023/0238328 A1Alliance for Sustainable Energy, LLC
- Method for manufacturing semiconductor device and semiconductor device29 Jun 2023US 2023/0207392 A1Rohm Co., Ltd.
- Ultra-Thin Super Junction IGBT Device and Manufacturing Method Thereof18 May 2023US 2023/0155014 A1Shanghai Supersemiconductor Technology Co., Ltd.
Most cited
By later US patents
- Sulfur-containing thin films479US 9,245,742 B2ASM IP Holding B. V. · 2016
- Shaped nanocrystal particles and methods for making the same140US 6,855,202 B2The Regents of the University of California · 2005
- Utilizing interdiffusion of sequentially deposited links of HgTe and CdTe35US 4,566,918 AThe Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Northern Ireland · 1986
- Compound semiconductor integrated circuit device28US 4,777,517 AFujitsu Limited · 1988
- Excitation band-gap tuning of dopant based quantum dots with core-inner shell outer shell20US 7,776,630 B1University of Central Florida Research Foundation, Inc. · 2010