US 2023/0155014 A1 · Ultra-Thin Super Junction IGBT Device and Manufacturing Method Thereof

Abstract

The present invention discloses an ultra-thin super junction IGBT and a manufacturing method thereof, comprising: a metalized collector; a P-type collector region located on the metalized collector; an N-type FS layer located above the P-type collector region; an N-type FS isolating layer located above the N-type FS layer; a first N-type epitaxial layer located above the N-type FS isolating layer and a second N-type epitaxial layer located above the first N-type epitaxial layer; and a MOS structure located in the second N-type epitaxial layer. According to the present invention, thinning the chip thickness reduces forward conduction voltage drop and switching losses, while reducing thermal resistance and improving current conducting capability.

Claims10

Dependent claims

An ultra-thin super junction IGBT, characterized by comprising:

a metalized collector (1);
a P-type collector region (2) located on the metalized collector (1);
an N-type FS layer (3) located above the P-type collector region (2);
an N-type FS isolating layer (4) located above the N-type FS layer (3);
a first N-type epitaxial layer (5) located above the N-type FS isolating layer (4) and a second N-type epitaxial layer (6) located above the first N-type epitaxial layer (5);
and a MOS structure located in the second N-type epitaxial layer.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

17/683,300Filed 28 Feb 2022

Priority

CN 202111337346.712 Nov 2021

Published

18 May 2023

Term ends

Not estimatedThe source records don’t support an estimate.

Classification8 codes

H10D 12/481
Having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions: having gate…
H10D 12/038
Of vertical IGBTs: having a recessed gate, e.g. trench-gate IGBTs
H10D 62/058
Forming charge compensation regions, e.g. superjunctions: by using trenches, e.g. implanting into sidewalls of trenches or refilling trenches
H10D 62/111
Reduced surface field [RESURF] PN junction structures: multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures

Ultra-Thin Super Junction IGBT Device and Manufacturing Method Thereof

Life of this patent

Ultra-Thin Super Junction IGBT Device and Manufacturing Method Thereof

Life of this patent

Abstract

Claims10