Band bend controlled topological semimetal devices and methods therefor
AssigneeAlliance for Sustainable Energy, LLC
InventorsKirstin ALBERI, Anthony D. RICE, Brian Darrius FLUEGEL, Choong Hee LEE
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Abstract
Described herein are devices and methods that utilize three-dimensional topological semimetals (including Dirac, Weyl and nodal line) that may be useful in advanced electronic devices. The Fermi level in three dimensional topological semimetals can be significantly shifted in energy when forming a heterojunction with a semiconductor or metal. This has unintended and sometimes negative consequences for device performance. Described herein are designs and methods to modify the heterostructures to either suppress Fermi level movement or to produce an intentional shift to allow for the use of these improved semimetal devices.
Claims20
A device comprising:
- a Dirac, Weyl or nodal line topological semimetal layer;
- a dielectric layer proximate to the semimetal layer;
- a metal layer or semiconductor layer proximate to the dielectric layer.
7 The device of claim 1, wherein the dielectric layer comprises a dielectric selected from the group consisting of:
- CdTe, ZnTe, ZnxCd1-xTe, Al2O3, a III-V semiconductor, a II-VI semiconductor, an oxide, a nitride, a silicide and a combination thereof.
A photodetector comprising:
- a semimetal layer comprising a Dirac, Weyl or nodal line topological semimetal selected from the group consisting of:
- Cd3As2, Na3Bi, NbAs, WTe2, TaAs, TaP, ZrTe5, NbP and a combination thereof;
- an undoped dielectric layer proximate to the semimetal layer;
- and
- a doped semiconductor layer proximate to the dielectric layer;
- wherein the semimetal layer, the dielectric layer and/or the semiconductor layer are epitaxially integrated.
A transistor comprising:
- a semimetal layer comprising a Dirac, Weyl or nodal line topological semimetal selected from the group consisting of:
- Cd3As2, Na3Bi, NbAs, WTe2, TaAs, TaP, ZrTe5, NbP and a combination thereof;
- an undoped dielectric layer proximate to the semimetal layer;
- and
- a metal layer comprising at least one metal proximate to the dielectric layer;
- wherein the semimetal layer, the dielectric layer and/or the metal layer are epitaxially integrated.
Dependencies are inferred from the claim text.