Excitation band-gap tuning of dopant based quantum dots with core-inner shell outer shell

A method for fabricating a dopant based core/shell/shell semiconductor having a quantum dot core with a tunable excitation band-gap consisting of the steps of:

• selecting an acetate precursor of semiconductor materials having identical crystal structures with minimal lattice mismatch;
• adding a bivalent transition metal ion as a dopant;
• mixing the acetate precursor of semiconductor material and bivalent transition metal ion dopant in a first water-in-oil emulsion at room temperature;
• mixing a sulfide ion source in a second water-in-oil emulsion at room temperature;
• combining the first water-in-oil emulsion with the acetate precursor of semiconductor material and bivalent transition metal with the second water-in-oil emulsion containing the sulfide ion source, at room temperature to form a quantum dot (Qdot) alloy core;
• and growing an outer semiconductor material shell layer about the Qdot core to form a ternary alloy core/shell dopant based quantum dot semiconductor said semiconductor comprising:
• an alloy of cadmium sulfide (CdS) and zinc sulfide (ZnS) semiconductor materials to form a core;
• a concentric layer composed of in-situ formed CdxZn(1-x)S alloy embedded with the dopant manganese (Mn) forming an inner shell surrounding the core;
• and an outer shell of zinc sulfide (ZnS).