Semiconductor device

A semiconductor device comprising:

• a transistor and a capacitor element;
• a first conductive layer comprising a region configured to be one of a source electrode and a drain electrode of the transistor;
• a first insulating layer comprising a region positioned over the first conductive layer;
• a second conductive layer comprising a region configured to be the other of the source electrode and the drain electrode of the transistor and comprising a region positioned over the first insulating layer;
• an opening passing through the first insulating layer and the second conductive layer and overlapping with the first conductive layer;
• a semiconductor layer comprising a region in contact with the first insulating layer, a region in contact with the first conductive layer, and a region in contact with the second conductive layer;
• a third conductive layer comprising a region configured to be a gate electrode of the transistor;
• a second insulating layer comprising a region configured to be a gate insulating layer of the transistor and comprising a region interposed between the semiconductor layer and the third conductive layer in the opening;
• a fourth conductive layer comprising a region configured to be one electrode of the capacitor element;
• and
• a third insulating layer comprising a region configured to be a dielectric layer of the capacitor element and comprising a region interposed between the third conductive layer and the fourth conductive layer in the opening,
• wherein the third conductive layer comprises a region configured to be the other electrode of the capacitor element, and
• wherein the third insulating layer has ferroelectricity.