H10D 62/834
Further characterised by the dopants
Official title: further characterised by the dopants
H10D62/834 (Further characterised by the dopants) appears on 1,812 US grants and 1,837 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,812
- Published applications
- 1,837
- Assignees
- 404
- Inventors
- 2,824
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 3 | 0 |
| 1978 | 12 | 0 |
| 1979 | 7 | 0 |
| 1980 | 12 | 0 |
| 1981 | 9 | 0 |
| 1982 | 4 | 0 |
| 1983 | 6 | 0 |
| 1984 | 8 | 0 |
| 1985 | 4 | 0 |
| 1986 | 13 | 0 |
| 1987 | 9 | 0 |
| 1988 | 9 | 0 |
| 1989 | 10 | 0 |
| 1990 | 7 | 0 |
| 1991 | 10 | 0 |
| 1992 | 5 | 0 |
| 1993 | 4 | 0 |
| 1994 | 7 | 0 |
| 1995 | 5 | 0 |
| 1996 | 11 | 0 |
| 1997 | 13 | 0 |
| 1998 | 18 | 0 |
| 1999 | 18 | 0 |
| 2000 | 14 | 0 |
| 2001 | 14 | 5 |
| 2002 | 12 | 8 |
| 2003 | 18 | 9 |
| 2004 | 10 | 15 |
| 2005 | 9 | 13 |
| 2006 | 12 | 19 |
| 2007 | 12 | 12 |
| 2008 | 7 | 15 |
| 2009 | 12 | 19 |
| 2010 | 7 | 19 |
| 2011 | 15 | 18 |
| 2012 | 9 | 34 |
| 2013 | 29 | 42 |
| 2014 | 42 | 77 |
| 2015 | 104 | 161 |
| 2016 | 162 | 189 |
| 2017 | 179 | 186 |
| 2018 | 167 | 156 |
| 2019 | 175 | 155 |
| 2020 | 136 | 160 |
| 2021 | 102 | 102 |
| 2022 | 88 | 94 |
| 2023 | 82 | 90 |
| 2024 | 79 | 83 |
| 2025 | 75 | 88 |
| 2026 | 34 | 68 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method for manufacturing semiconductor structure with source/drain structure having modified shape6 Oct 2026US 12,757,422 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Low-resistance and thermally stable contacts with boride, indium, or gallium metal compound layers6 Oct 2026US 12,757,430 B2Intel Corporation
- Trench power semiconductor device and method for manufacturing same6 Oct 2026US 12,757,438 B2Microchip Technology Incorporated
- Semiconductor device with active layers doped by sacrificial layers and method thereof29 Sep 2026US 12,751,064 B2Samsung Electronics Co., Ltd.
- Systems for selective deposition using a sacrificial capping layer15 Sep 2026US 12,740,346 B2ASM IP Holding B. V.
- Semiconductor memory device including plurality of single crystalline silicon layers1 Oct 2026US 2026/0304877 A1Samsung Electronics Co., Ltd.
- Backside contact with epitaxial liner1 Oct 2026US 2026/0304939 A1International Business Machines Corporation
- Semiconductor device structure and method for forming the same1 Oct 2026US 2026/0304940 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Radiation hardened (rad-hard) devices including superlattice to control boron doping profile and related methods24 Sep 2026US 2026/0293251 A1Atomera Incorporated
- Low mass ion etch for cavity shaping engineering for cmos devices24 Sep 2026US 2026/0293632 A1APPLIED Materials.Inc.
Most cited
By later US patents
- In-situ doping of arsenic for source and drain epitaxy548US 8,962,400 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Methods of forming highly p-type doped germanium tin films and structures and devices including the films484US 9,647,114 B2ASM IP Holding B. V. · 2017
- Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures421US 10,236,177 B1ASM IP Holding B. V. · 2019
- High acceptor level doping in silicon germanium420US 9,799,736 B1International Business Machines Corporation · 2017
- Micro device transfer head heater assembly and method of transferring a micro device220US 8,349,116 B1LuxVue Technology Corporation · 2013