H10D 62/83
Being group iv materials
Official title: being Group IV materials, e.g. B-doped Si or undoped Ge
H10D62/83 (Being group iv materials) appears on 13,794 US grants and 15,872 published applications in this corpus.
Search patents in H10D- Granted patents
- 13,794
- Published applications
- 15,872
- Assignees
- 1,750
- Inventors
- 14,842
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 15 | 0 |
| 1977 | 8 | 0 |
| 1978 | 16 | 0 |
| 1979 | 9 | 0 |
| 1980 | 20 | 0 |
| 1981 | 23 | 0 |
| 1982 | 17 | 0 |
| 1983 | 14 | 0 |
| 1984 | 22 | 0 |
| 1985 | 20 | 0 |
| 1986 | 23 | 0 |
| 1987 | 22 | 0 |
| 1988 | 30 | 0 |
| 1989 | 44 | 0 |
| 1990 | 36 | 0 |
| 1991 | 42 | 0 |
| 1992 | 45 | 0 |
| 1993 | 43 | 0 |
| 1994 | 72 | 0 |
| 1995 | 54 | 0 |
| 1996 | 55 | 0 |
| 1997 | 68 | 0 |
| 1998 | 97 | 0 |
| 1999 | 92 | 0 |
| 2000 | 90 | 0 |
| 2001 | 118 | 38 |
| 2002 | 82 | 110 |
| 2003 | 113 | 122 |
| 2004 | 104 | 147 |
| 2005 | 112 | 192 |
| 2006 | 129 | 226 |
| 2007 | 114 | 218 |
| 2008 | 121 | 273 |
| 2009 | 172 | 295 |
| 2010 | 260 | 331 |
| 2011 | 258 | 377 |
| 2012 | 283 | 505 |
| 2013 | 420 | 616 |
| 2014 | 586 | 812 |
| 2015 | 865 | 1187 |
| 2016 | 1155 | 1298 |
| 2017 | 1196 | 1267 |
| 2018 | 1073 | 1050 |
| 2019 | 1081 | 1001 |
| 2020 | 955 | 970 |
| 2021 | 751 | 776 |
| 2022 | 638 | 863 |
| 2023 | 564 | 868 |
| 2024 | 612 | 837 |
| 2025 | 651 | 813 |
| 2026 | 404 | 680 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method for manufacturing semiconductor structure with source/drain structure having modified shape6 Oct 2026US 12,757,422 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Low-resistance and thermally stable contacts with boride, indium, or gallium metal compound layers6 Oct 2026US 12,757,430 B2Intel Corporation
- Trench power semiconductor device and method for manufacturing same6 Oct 2026US 12,757,438 B2Microchip Technology Incorporated
- Semiconductor device and manufacturing method6 Oct 2026US 12,757,452 B2Hitachi Energy Ltd
- Silicon carbide semiconductor device and manufacturing method therefor6 Oct 2026US 12,757,464 B2Hubei Jiufengshan Laboratory
- Semiconductor device8 Oct 2026US 2026/0311745 A1Semiconductor Energy Laboratory Co.Ltd.
- Semiconductor device including ferroelectric material film and method for fabricating a semiconductor device8 Oct 2026US 2026/0313906 A1Samsung Electronics Co., Ltd.
- Defect free low temperature junction formation for 4f2 dram8 Oct 2026US 2026/0313935 A1APPLIED Materials.Inc.
- Dual gate ldmos devices for gate-all-around process flows8 Oct 2026US 2026/0313950 A1Avago Technologies International Sales Pte. Limited
- Silicon carbide semiconductor device8 Oct 2026US 2026/0313956 A1Fuji Electric Co., Ltd.
Most cited
By later US patents
- Vertical gate all around (VGAA) devices and methods of manufacturing the same987US 9,536,738 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Silicide regions in vertical gate all around (VGAA) devices and methods of forming same841US 9,412,817 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Silicon carbide semiconductor device and method for producing the same641US 7,829,416 B2Panasonic Corporation · 2010
- Metal silicide, metal germanide, methods for making the same559US 9,129,897 B2ASM International N.V. · 2015