H10D 62/832
Being group iv materials comprising two or more elements
Official title: being Group IV materials comprising two or more elements, e.g. SiGe
H10D62/832 (Being group iv materials comprising two or more elements) appears on 8,337 US grants and 10,252 published applications in this corpus.
Search patents in H10D- Granted patents
- 8,337
- Published applications
- 10,252
- Assignees
- 1,056
- Inventors
- 8,503
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 4 | 0 |
| 1986 | 2 | 0 |
| 1987 | 5 | 0 |
| 1988 | 6 | 0 |
| 1989 | 3 | 0 |
| 1990 | 4 | 0 |
| 1991 | 8 | 0 |
| 1992 | 9 | 0 |
| 1993 | 16 | 0 |
| 1994 | 25 | 0 |
| 1995 | 24 | 0 |
| 1996 | 19 | 0 |
| 1997 | 31 | 0 |
| 1998 | 42 | 0 |
| 1999 | 45 | 0 |
| 2000 | 51 | 0 |
| 2001 | 60 | 22 |
| 2002 | 45 | 56 |
| 2003 | 61 | 70 |
| 2004 | 52 | 72 |
| 2005 | 57 | 89 |
| 2006 | 61 | 115 |
| 2007 | 61 | 115 |
| 2008 | 62 | 158 |
| 2009 | 89 | 157 |
| 2010 | 152 | 159 |
| 2011 | 118 | 213 |
| 2012 | 136 | 288 |
| 2013 | 223 | 367 |
| 2014 | 326 | 474 |
| 2015 | 489 | 700 |
| 2016 | 714 | 802 |
| 2017 | 740 | 834 |
| 2018 | 712 | 694 |
| 2019 | 703 | 654 |
| 2020 | 627 | 636 |
| 2021 | 496 | 510 |
| 2022 | 442 | 625 |
| 2023 | 364 | 658 |
| 2024 | 435 | 628 |
| 2025 | 481 | 623 |
| 2026 | 329 | 533 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Trench power semiconductor device and method for manufacturing same6 Oct 2026US 12,757,438 B2Microchip Technology Incorporated
- Semiconductor device and manufacturing method6 Oct 2026US 12,757,452 B2Hitachi Energy Ltd
- Silicon carbide semiconductor device and manufacturing method therefor6 Oct 2026US 12,757,464 B2Hubei Jiufengshan Laboratory
- Insulating-gate bipolar transistors including a reverse conducting diode29 Sep 2026US 12,751,025 B2GLOBALFOUNDRIES U. S. Inc.
- Field effect transistor having same gate and source doping, cell structure, and preparation method29 Sep 2026US 12,751,031 B2PN Junction Semiconductor (Hangzhou) Co., Ltd.
- Dual gate ldmos devices for gate-all-around process flows8 Oct 2026US 2026/0313950 A1Avago Technologies International Sales Pte. Limited
- Silicon carbide semiconductor device8 Oct 2026US 2026/0313956 A1Fuji Electric Co., Ltd.
- Semiconductor device and method for fabricating the same8 Oct 2026US 2026/0313958 A1United Microelectronics Corp.
- Wide bandgap material in drift well of semiconductor device8 Oct 2026US 2026/0313993 A1
- Electric field readout of a solid-state sensor8 Oct 2026US 2026/0313995 A1Rtx Bbn Technologies, Inc.
Most cited
By later US patents
- Vertical gate all around (VGAA) devices and methods of manufacturing the same987US 9,536,738 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Silicon carbide semiconductor device and method for producing the same641US 7,829,416 B2Panasonic Corporation · 2010
- Wrap-around contact550US 9,443,769 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- In-situ doping of arsenic for source and drain epitaxy548US 8,962,400 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015