H10D 62/8325
Silicon carbide
Official title: {Silicon carbide}
H10D62/8325 (Silicon carbide) appears on 6,056 US grants and 7,691 published applications in this corpus.
Search patents in H10D- Granted patents
- 6,056
- Published applications
- 7,691
- Assignees
- 904
- Inventors
- 6,445
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 4 | 0 |
| 1989 | 1 | 0 |
| 1990 | 4 | 0 |
| 1991 | 8 | 0 |
| 1992 | 6 | 0 |
| 1993 | 14 | 0 |
| 1994 | 19 | 0 |
| 1995 | 22 | 0 |
| 1996 | 18 | 0 |
| 1997 | 27 | 0 |
| 1998 | 39 | 0 |
| 1999 | 38 | 0 |
| 2000 | 47 | 0 |
| 2001 | 56 | 22 |
| 2002 | 40 | 44 |
| 2003 | 50 | 51 |
| 2004 | 37 | 60 |
| 2005 | 47 | 71 |
| 2006 | 55 | 109 |
| 2007 | 54 | 104 |
| 2008 | 54 | 133 |
| 2009 | 77 | 138 |
| 2010 | 129 | 139 |
| 2011 | 99 | 191 |
| 2012 | 120 | 257 |
| 2013 | 201 | 322 |
| 2014 | 280 | 388 |
| 2015 | 371 | 473 |
| 2016 | 433 | 497 |
| 2017 | 464 | 544 |
| 2018 | 461 | 482 |
| 2019 | 480 | 486 |
| 2020 | 450 | 434 |
| 2021 | 357 | 367 |
| 2022 | 306 | 462 |
| 2023 | 252 | 481 |
| 2024 | 309 | 497 |
| 2025 | 354 | 501 |
| 2026 | 267 | 438 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Trench power semiconductor device and method for manufacturing same6 Oct 2026US 12,757,438 B2Microchip Technology Incorporated
- Semiconductor device and manufacturing method6 Oct 2026US 12,757,452 B2Hitachi Energy Ltd
- Silicon carbide semiconductor device and manufacturing method therefor6 Oct 2026US 12,757,464 B2Hubei Jiufengshan Laboratory
- Insulating-gate bipolar transistors including a reverse conducting diode29 Sep 2026US 12,751,025 B2GLOBALFOUNDRIES U. S. Inc.
- Field effect transistor having same gate and source doping, cell structure, and preparation method29 Sep 2026US 12,751,031 B2PN Junction Semiconductor (Hangzhou) Co., Ltd.
- Silicon carbide semiconductor device8 Oct 2026US 2026/0313956 A1Fuji Electric Co., Ltd.
- Semiconductor device and method for fabricating the same8 Oct 2026US 2026/0313958 A1United Microelectronics Corp.
- Wide bandgap material in drift well of semiconductor device8 Oct 2026US 2026/0313993 A1
- Electric field readout of a solid-state sensor8 Oct 2026US 2026/0313995 A1Rtx Bbn Technologies, Inc.
- Silicon carbide substrate, silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor device8 Oct 2026US 2026/0313998 A1Sumitomo Electric Industries, Ltd.
Most cited
By later US patents
- Silicon carbide semiconductor device and method for producing the same641US 7,829,416 B2Panasonic Corporation · 2010
- Wrap-around contact550US 9,443,769 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Film forming method, semiconductor device, manufacturing method thereof and substrate processing apparatus therefor470US 8,785,311 B2Tokyo Electron Limited · 2014
- Atomic layer deposition method and semiconductor device formed by the same469US 8,158,512 B2Semiconductor Manufacturing International (Shanghai) Corporation · 2012
- Substrate processing apparatus469US 8,999,102 B2Tokyo Electron Limited · 2015