Film forming method, semiconductor device, manufacturing method thereof and substrate processing apparatus therefor

A method for forming a stacked substrate of a MOS structure including a gate insulating film having a first and a second insulating film formed on a semiconductor material layer having a film or substrate shape;

• and a conductive film serving as a gate electrode formed on the gate insulating film, the method comprising:
• forming the first insulating film on the semiconductor material layer;
• forming a polysilane film on the first insulating film by coating a polysilane solution on a surface of a substrate to which the first insulating film is exposed;
• and
• forming a film containing metal ions on the polysilane film by coating a metal salt solution thereon and modifying respectively the polysilane film and the film containing metal ions into a polysiloxane film serving as the second insulating film and a film containing fine metal particles to form the stacked substrate.

A method for manufacturing a semiconductor device of a MOS structure including an oxide film serving as a gate insulating film formed on a semiconductor material layer having a film or substrate shape;

• and a conductive film serving as a gate electrode formed on the oxide film, the method comprising:
• forming a first polysilane film on the semiconductor material layer by coating a polysilane solution on a surface of a substrate to which the semiconductor material layer is exposed;
• forming a monomolecular film in a pattern on the first polysilane film;
• forming a film containing metal ions on the first polysilane film and the monomolecular film by coating a metal salt solution thereon and modifying respectively the first polysilane film, which is in contact with the film containing metal ions, and the film containing metal ions into a first polysiloxane film and a film containing fine metal particles to form a stacked substrate of a MOS structure;
• and
• removing an unmodified portion of the film containing metal ions, the monomolecular film and an unmodified portion of the first polysilane film by an etching.