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US 9,647,114 B2Granted
Methods of forming highly p-type doped germanium tin films and structures and devices including the films
AssigneeASM IP Holding B.V.
InventorsJoe Margetis, John Tolle
Life of this patent
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Abstract
Methods of forming p-type doped germanium-tin layers, systems for forming the p-type doped germanium-tin layers, and structures including the p-type doped germanium-tin layers are disclosed. The p-type doped germanium-tin layers include an n-type dopant, which allows relatively high levels of tin and/or p-type dopant to be included into the p-type doped germanium-tin layers.
Claims11
A method of forming a p-type doped germanium-tin layer, the method comprising the steps of:
- providing a substrate within a reaction chamber of a reactor;
- providing one or more precursors to the reaction chamber;
- and
- forming a p-typed doped germanium-tin layer on a surface of a substrate within the reaction chamber,
- wherein the p-type doped germanium-tin layer comprises about 1×1018 cm−3 to about 1×1020 cm−3 p-type dopant comprising a group 13 element, and
- wherein the p-type doped germanium-tin layer comprises about 1×1017 cm−3 to about 5×1017 cm−3 n-type dopant comprising a group 15 element.
3 more elements
Dependencies are inferred from the claim text.