Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures
AssigneeASM IP Holding B.V.
InventorsDavid Kohen, Harald Benjamin Profijt
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Abstract
A method for depositing a germanium tin (Ge1-xSnx) semiconductor is disclosed. The method may include; providing a substrate within a reaction chamber, heating the substrate to a deposition temperature and exposing the substrate to a germanium precursor and a tin precursor. The method may further include; depositing a germanium tin (Ge1-xSnx) semiconductor on the surface of the substrate, and exposing the germanium tin (Ge1-xSnx) semiconductor to a boron dopant precursor. Semiconductor device structures including a germanium tin (Ge1-xSnx) semiconductor formed by the methods of the disclosure are also provided.
Claims20
A method of depositing a doped germanium tin (Ge1-xSnx) semiconductor comprising:
- providing a substrate within a reaction chamber;
- heating the substrate to a deposition temperature;
- exposing the substrate to a germanium precursor and a tin precursor in the reaction chamber;
- depositing a germanium tin (Ge1-xSnx) semiconductor on a surface of the substrate;
- after the step of deposting, removing the germanium precursor and the tin precursor from the reaction chamber;
- after the step of removing, exposing the germanium tin (Ge1-xSnx) semiconductor to a boron dopant precursor while no tin precursor and no germanium precursor are introduced to the reaction chamber;
- and
- after the step of exposing, annealing the germanium tin (Ge1-xSnx) semiconductor.
Dependencies are inferred from the claim text.