H10D 62/82
Heterojunctions
H10D62/82 (Heterojunctions) appears on 10,869 US grants and 13,892 published applications in this corpus.
Search patents in H10D- Granted patents
- 10,869
- Published applications
- 13,892
- Assignees
- 1,165
- Inventors
- 11,182
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 6 | 0 |
| 1977 | 7 | 0 |
| 1978 | 2 | 0 |
| 1979 | 7 | 0 |
| 1980 | 5 | 0 |
| 1981 | 3 | 0 |
| 1982 | 3 | 0 |
| 1983 | 5 | 0 |
| 1984 | 6 | 0 |
| 1985 | 10 | 0 |
| 1986 | 8 | 0 |
| 1987 | 14 | 0 |
| 1988 | 12 | 0 |
| 1989 | 33 | 0 |
| 1990 | 24 | 0 |
| 1991 | 33 | 0 |
| 1992 | 26 | 0 |
| 1993 | 20 | 0 |
| 1994 | 21 | 0 |
| 1995 | 25 | 0 |
| 1996 | 15 | 0 |
| 1997 | 26 | 0 |
| 1998 | 22 | 0 |
| 1999 | 27 | 0 |
| 2000 | 19 | 0 |
| 2001 | 34 | 10 |
| 2002 | 30 | 38 |
| 2003 | 32 | 61 |
| 2004 | 42 | 63 |
| 2005 | 40 | 78 |
| 2006 | 52 | 149 |
| 2007 | 60 | 158 |
| 2008 | 90 | 245 |
| 2009 | 131 | 238 |
| 2010 | 191 | 214 |
| 2011 | 202 | 254 |
| 2012 | 203 | 314 |
| 2013 | 264 | 406 |
| 2014 | 385 | 540 |
| 2015 | 549 | 828 |
| 2016 | 835 | 922 |
| 2017 | 875 | 879 |
| 2018 | 823 | 711 |
| 2019 | 747 | 796 |
| 2020 | 781 | 929 |
| 2021 | 630 | 792 |
| 2022 | 687 | 1037 |
| 2023 | 647 | 1265 |
| 2024 | 827 | 998 |
| 2025 | 938 | 1247 |
| 2026 | 395 | 720 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10D 62/822Comprising only group iv materials heterojunctions7,085
- H10D 62/824Comprising only group iii-v materials heterojunctions2,991
- H10D 62/826Comprising only group ii-vi materials heterojunctions94
- H10D 62/8271Comprising only oxide semiconductor materials heterojunctions49
- H10D 62/8281Comprising only transition metal dichalcogenide materials heterojunctions28
Recent patents
- Semiconductor device with nanowire heterojunction and manufacturing method thereof29 Sep 2026US 12,751,032 B2Enkris Semiconductor, Inc.
- Charge balanced power transistors29 Sep 2026US 12,751,036 B2Virginia Tech Intellectual Properties, Inc.
- Quantum heterostructures, related devices and methods for manufacturing the same29 Sep 2026US 12,751,060 B2Ecole Polytechnique de Montreal
- Resistor structure including charge control layer22 Sep 2026US 12,745,407 B2Texas Instruments Incorporated
- Gate-all-around integrated circuit structures having fin stack isolation22 Sep 2026US 12,745,416 B2Intel Corporation
- Memory device and manufacturing method thereof8 Oct 2026US 2026/0313901 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and method of manufacture8 Oct 2026US 2026/0313943 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Raised source/drain oxide semiconducting thin film transistor and methods of making the same8 Oct 2026US 2026/0313959 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Doping profile for strained source/drain region8 Oct 2026US 2026/0313975 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Wide bandgap material in drift well of semiconductor device8 Oct 2026US 2026/0313993 A1
Most cited
By later US patents
- High-electron mobility transistor with zinc oxide3,938US 7,105,868 B2Cermet, Inc. · 2006
- FINFETs with wrap-around silicide and method forming the same1,436US 9,608,116 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Apparatus and method for forming semiconductor contacts1,331US 8,772,109 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Aligned gate-all-around structure849US 9,412,828 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016