US 12,745,407 B2Granted

Resistor structure including charge control layer

AssigneeTexas Instruments Incorporated

InventorsSagnik Dey, Dhanoop Varghese, Dong Seup Lee

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Abstract

The present disclosure generally relates to a resistor structure having a charge control layer. In an example, an integrated circuit includes a semiconductor substrate, a dielectric layer, a first contact, a second contact, and a charge control layer. The semiconductor substrate includes a semiconductor hetero-structure. The dielectric layer is disposed over the semiconductor substrate. The first contact is disposed through the dielectric layer and contacting the semiconductor hetero-structure. The second contact is disposed through the dielectric layer and contacting the semiconductor hetero-structure. The second contact is disposed laterally separated from the first contact. The charge control layer is disposed over the semiconductor hetero-structure and laterally between the first contact and the second contact. At least a portion of the dielectric layer is disposed between the charge control layer and the semiconductor hetero-structure.

Claims24

Dependent claims

A semiconductor device, comprising:

a semiconductor substrate comprising a semiconductor hetero-structure;
a first dielectric layer disposed over the semiconductor substrate;
a first contact disposed through the first dielectric layer and contacting the semiconductor hetero-structure;
a second contact disposed through the first dielectric layer and contacting the semiconductor hetero-structure, the second contact being disposed laterally separated from the first contact;
a second dielectric layer disposed over at least portions of the first contact, the second contact, and the first dielectric layer, the second dielectric layer including silicon nitride;
a third dielectric layer disposed between the portion of first dielectric layer and the second dielectric layer such that the first and third dielectric layers physically contact each other and the second and third dielectric layers physically contact each other, wherein the third dielectric layer is an ultraviolet blocking layer and has a different material composition than the first and second dielectric layers;
and
a charge control layer disposed over the semiconductor hetero-structure and laterally between the first contact and the second contact, at least the portion of the first dielectric layer being disposed between the charge control layer and the semiconductor hetero-structure, wherein the charge control layer includes a same material as the first contact.

5 more elements

An integrated circuit comprising:

a resistor structure comprising:
a hetero-structure comprising an epitaxial layer disposed over a dissimilar semiconductor material;
a first contact disposed through a first dielectric layer over the hetero-structure, the first contact electrically contacting the dissimilar semiconductor material;
a second contact disposed through the first dielectric layer and laterally separate from the first contact, the second contact electrically contacting the dissimilar semiconductor material;
a second dielectric layer disposed over at least portions of the first contact, the second contact, and the first dielectric layer, the second dielectric layer including silicon nitride;
a third dielectric layer disposed between the portion of first dielectric layer and the second dielectric layer such that the first and third dielectric layers physically contact each other and the second and third dielectric layers physically contact each other, wherein the third dielectric layer is an ultraviolet blocking layer and has a different material composition than the first and second dielectric layers;
and
a charge control layer disposed over the hetero-structure and laterally between the first contact and the second contact, at least the portion of the first dielectric layer being disposed between the charge control layer and the hetero-structure, wherein the charge control layer includes a same material as the first contact.

5 more elements

Dependencies are inferred from the claim text.