H10D 62/8281
Comprising only transition metal dichalcogenide materials heterojunctions
Official title: {comprising only transition metal dichalcogenide materials heterojunctions, e.g. MoS2/WSe2}
H10D62/8281 (Comprising only transition metal dichalcogenide materials heterojunctions) appears on 28 US grants and 44 published applications in this corpus.
Search patents in H10D- Granted patents
- 28
- Published applications
- 44
- Assignees
- 20
- Inventors
- 103
- Latest grant
- 12 Aug 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2015 | 0 | 1 |
| 2016 | 1 | 1 |
| 2017 | 0 | 4 |
| 2018 | 5 | 5 |
| 2019 | 5 | 3 |
| 2020 | 3 | 4 |
| 2021 | 3 | 6 |
| 2022 | 4 | 4 |
| 2023 | 1 | 2 |
| 2024 | 4 | 6 |
| 2025 | 2 | 5 |
| 2026 | 0 | 3 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device and method of manufacturing semiconductor device12 Aug 2025US 12,387,944 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Transistors including two-dimensional materials3 Jun 2025US 12,324,204 B2Intel Corporation
- Deposition of highly crystalline 2D materials8 Oct 2024US 12,112,946 B2Imec Vzw
- Semiconductor device and manufacturing method thereof20 Aug 2024US 12,068,405 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of manufacturing semiconductor device5 Mar 2024US 11,923,203 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit device18 Jun 2026US 2026/0173434 A1Samsung Electronics Co., Ltd.
- Semiconductor device and method of manufacturing the semiconductor device11 Jun 2026US 2026/0164699 A1Samsung Electronics Co., Ltd.
- Semiconductor device including two-dimensional nano-crystalline grain channel, method of manufacturing semiconductor device, and electronic apparatus including semiconductor device21 May 2026US 2026/0143736 A1Samsung Electronics Co., Ltd.
- Semiconductor device and method of manufacturing semiconductor device16 Oct 2025US 2025/0323060 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Hybrid covalent-van der waals system 2d heterostructures by dative epitaxy29 May 2025US 2025/0171928 A1
Most cited
By later US patents
- Systems and methods for implementing select devices constructed from 2D materials6US 10,217,798 B2Inston, Inc. · 2019
- Semiconductor device and method of manufacturing semiconductor device4US 11,430,666 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2022
- Two-dimensional heterostructure materials4US 9,964,846 B2UT-Battelle, LLC · 2018
- Method of forming a semiconductor device using layered etching and repairing of damaged portions3US 10,269,564 B2National Taiwan University · 2019
- Gate-tunable P-N heterojunction diode, and fabrication method and application of same3US 9,472,686 B2Northwestern University · 2016