Semiconductor device including two-dimensional nano-crystalline grain channel, method of manufacturing semiconductor device, and electronic apparatus including semiconductor device

A method of manufacturing a semiconductor device, the method comprising:

• forming a channel layer, the channel layer comprising a first transition metal dichalcogenide layer and a second transition metal dichalcogenide layer on the first transition metal dichalcogenide layer;
• forming a source electrode and a drain electrode such that the source electrode and the drain electrode are both electrically connected to the channel layer;
• and
• forming a gate insulating film and a gate electrode on the gate insulating film such that the gate insulating film insulates the channel layer from the gate electrode,
• wherein the first transition metal dichalcogenide layer comprises a highly crystalline transition metal dichalcogenide material having a two-dimensional crystal structure, and the second transition metal dichalcogenide layer comprises a nano-crystalline grain transition metal dichalcogenide material having a two-dimensional crystal structure.

An electronic apparatus comprising:

• a transistor comprising a channel layer, a gate electrode facing the channel layer, a gate insulating film between the channel layer and the gate electrode, and a source electrode and a drain electrode electrically connected to the channel layer;
• a word line electrically connected to the gate electrode of the transistor;
• a bit line electrically connected to the source electrode of the transistor;
• and
• a capacitor electrically connected to the drain electrode of the transistor,
• wherein the channel layer comprises a first transition metal dichalcogenide layer and a second transition metal dichalcogenide layer on the first transition metal dichalcogenide layer,
• the first transition metal dichalcogenide layer comprises a highly crystalline transition metal dichalcogenide material having a two-dimensional crystal structure, and
• the second transition metal dichalcogenide layer comprises a nano-crystalline grain transition metal dichalcogenide material having a two-dimensional crystal structure.