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US 11,923,203 B2Granted
Semiconductor device and method of manufacturing semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Piao Chuu, Ming-Yang Li, Lain-Jong Li
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Abstract
A method of fabricating a semiconductor device includes applying a plasma to a portion of a metal dichalcogenide film. The metal dichalcogenide film includes a first metal and a chalcogen selected from the group consisting of S, Se, Te, and combinations thereof. A metal layer including a second metal is formed over the portion of the metal dichalcogenide film after applying the plasma.
Claims20
A semiconductor device, comprising:
- a metal chalcogenide monolayer film disposed over a substrate,
- wherein the metal chalcogenide monolayer film comprises a first metal and a chalcogen selected from the group consisting of S, Se, Te, and combinations thereof, and
- wherein the metal chalcogenide monolayer film has a first surface portion and a second surface portion;
- and
- a metal layer disposed over the metal chalcogenide monolayer film,
- wherein the metal layer comprises a second metal,
- the metal layer is disposed over the first surface portion and not over the second surface portion, and
- wherein the metal layer is chemically bonded to the metal chalcogenide monolayer film.
5 more elements
A semiconductor device, comprising:
- a first metal chalcogenide monolayer film disposed over a substrate;
- a second metal chalcogenide monolayer film disposed over the first metal chalcogenide monolayer film;
- wherein the first and second metal chalcogenide monolayer films each comprise a first metal and a chalcogen selected from the group consisting of S, Se, Te, and combinations thereof, and
- wherein the second metal chalcogenide monolayer film is patterned so that portions of the first metal chalcogenide monolayer film are exposed through patterned portions of the second metal chalcogenide monolayer film;
- and
- a metal layer disposed over portions of the first metal chalcogenide monolayer film exposed through the second metal chalcogenide monolayer film,
- wherein the metal layer comprises a second metal, and
- wherein the metal layer is chemically bonded to the first metal chalcogenide monolayer film.
5 more elements
A semiconductor device, comprising:
- a channel region disposed over a first region of a semiconductor substrate,
- wherein the channel region comprises one or more metal dichalcogenide monolayers;
- source/drain regions disposed over second regions of the semiconductor substrate,
- wherein the second regions of the semiconductor substrate are on opposing sides of the first region of the semiconductor substrate, and
- wherein the source/drain regions comprise one or more metal chalcogenide monolayers, wherein each of the metal chalcogenide monolayers comprises a first metal and a chalcogen selected from the group consisting of S, Se, Te, and combinations thereof;
- and
- a metal layer including a second metal disposed over the source/drain regions,
- wherein the metal layer is chemically bonded to the metal chalcogenide monolayers in the second regions.
5 more elements
Dependencies are inferred from the claim text.