Integrated circuit device
AssigneeSamsung Electronics Co., Ltd.
InventorsSoyeong Ahn, Bong Jin Kuh, Suk Yang, Sangmoon Lee
Life of this patent
Estimating the term…
Abstract
An example integrated circuit device includes an active region extending in a first horizontal direction on a substrate, a channel layer arranged on the active region to be apart in a vertical direction and extending in the first horizontal direction, a gate line extending in a second horizontal direction intersecting the first horizontal direction on the active region and surrounding the channel layer, a source/drain region arranged on the active region in contact with the channel layer, and an oxide layer arranged between the channel layer and the gate line. The channel layer comprises transition metal dichalcogenides (TMD), and the oxide layer comprises high dielectric constant (high-k) oxide.
Claims20
An integrated circuit device comprising:
- an active region extending in a first horizontal direction on a substrate;
- a channel layer on the active region and extending in the first horizontal direction, the channel layer being spaced apart from the active region in a vertical direction;
- a gate line extending in a second horizontal direction on the active region and surrounding the channel layer, the second horizontal direction intersecting the first horizontal direction;
- a source/drain region on the active region, wherein the source/drain region contacts the channel layer;
- and
- an oxide layer between the channel layer and the gate line, wherein the channel layer comprises transition metal dichalcogenides (TMD), and wherein the oxide layer comprises high dielectric constant (high-k) oxide.
An integrated circuit device comprising:
- an active region extending in a first horizontal direction on a substrate;
- a channel layer including a first channel layer and a second channel layer, the first channel layer being on the active region, being spaced apart from the active region in a vertical direction, and extending in the first horizontal direction, and the second channel layer covering a top surface and a bottom surface of the first channel layer;
- a gate line extending in a second horizontal direction on the active region and surrounding the channel layer, the second horizontal direction intersecting the first horizontal direction;
- a source/drain region on the active region, wherein the source/drain region contacts the channel layer;
- and
- an oxide layer between the channel layer and the gate line, wherein the first channel layer comprises first transition metal dichalcogenides (TMD) including a first transition metal, wherein the second channel layer comprises second TMD including a second transition metal that is different from the first transition metal, and wherein the oxide layer comprises high dielectric constant (high-k) oxide.
An integrated circuit device comprising:
- an active region extending in a first horizontal direction on a substrate;
- a channel layer on the active region and extending in the first horizontal direction, the channel layer being spaced apart from the active region in a vertical direction;
- a gate line extending in a second horizontal direction on the active region and surrounding the channel layer, the second horizontal direction intersecting the first horizontal direction, wherein the gate line includes a main gate and a plurality of sub-gates between a plurality of channel layers adjacent in the vertical direction and between a lowermost channel layer of the a plurality of channel layers and the active region, and the main gate is connected to the sub-gates and covers an uppermost channel layer of the a plurality of channel layers;
- a source/drain region on the active region contacting the channel layer;
- an insulating spacer covering a plurality of sidewalls of the main gate;
- an internal spacer between the plurality of sub-gates and the source/drain region;
- and
- an oxide layer between the channel layer and the gate line, wherein the channel layer comprises transition metal dichalcogenides (TMD) including a first transition metal, and wherein the oxide layer comprises high dielectric constant (high-k) oxide including the first transition metal.
Dependencies are inferred from the claim text.