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US 12,387,944 B2Granted
Semiconductor device and method of manufacturing semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Piao Chuu, Ming-Yang Li, Lain-Jong Li
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Abstract
A method of fabricating a semiconductor device includes applying a plasma to a portion of a metal dichalcogenide film. The metal dichalcogenide film includes a first metal and a chalcogen selected from the group consisting of S, Se, Te, and combinations thereof. A metal layer including a second metal is formed over the portion of the metal dichalcogenide film after applying the plasma.
Claims20
A method of fabricating a semiconductor device, comprising:
- forming a first metal dichalcogenide monolayer film over a substrate,
- forming a second metal dichalcogenide monolayer film over the first metal dichalcogenide monolayer film,
- wherein the first and second metal dichalcogenide films comprise a first metal and a chalcogen selected from the group consisting of S, Se, Te, and combinations thereof;
- forming a patterned buffer layer over the first and second metal dichalcogenide monolayer films;
- removing a first portion of the second metal dichalcogenide monolayer film through openings in the patterned buffer layer to expose a first portion of the first metal dichalcogenide monolayer film;
- applying a plasma to second portions of the second metal dichalcogenide monolayer film to replace a chalcogen from the second metal dichalcogenide monolayer film;
- and
- forming a metal layer comprising a second metal over the second portions of the second metal dichalcogenide monolayer film after applying the plasma.
5 more elements
A method of fabricating a semiconductor device, comprising:
- replacing chalcogen of a metal chalcogenide film with hydrogen to form a metal chalcogenide having a surface layer comprising hydrogen,
- wherein the metal chalcogenide film comprises a first metal and a chalcogen selected from the group consisting of S, Se, Te, and combinations thereof;
- forming a patterned buffer layer over the metal chalcogenide film, the buffer layer having openings exposing portions of the metal chalcogenide film;
- and
- replacing the hydrogen of the surface layer of the metal chalcogenide with a second metal to form a metal chalcogenide film having a surface layer comprising the second metal.
2 more elements
A method of fabricating a semiconductor device, comprising:
- forming a metal dichalcogenide film over a substrate,
- wherein the metal dichalcogenide film comprises a first metal and a chalcogen selected from the group consisting of S, Se, Te, and combinations thereof;
- forming a buffer layer over the metal dichalcogenide film;
- patterning the buffer layer to expose portions of the metal dichalcogenide film;
- replacing the chalcogen in a surface layer of the exposed portions of the metal dichalcogenide film with hydrogen;
- and
- replacing the hydrogen in the surface layer of the exposed portions of the metal dichalcogenide film with a second metal different from the first metal.
4 more elements
Dependencies are inferred from the claim text.