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US 11,430,666 B2Granted
Semiconductor device and method of manufacturing semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Piao Chuu, Ming-Yang Li, Lain-Jong Li
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Abstract
A method of fabricating a semiconductor device includes applying a plasma to a portion of a metal dichalcogenide film. The metal dichalcogenide film includes a first metal and a chalcogen selected from the group consisting of S, Se, Te, and combinations thereof. A metal layer including a second metal is formed over the portion of the metal dichalcogenide film after applying the plasma.
Claims20
A method of fabricating a semiconductor device, comprising:
- applying a plasma to a portion of a metal dichalcogenide film,
- wherein the metal dichalcogenide film comprises a first metal and a chalcogen selected from the group consisting of S, Se, Te, and combinations thereof;
- forming a first metal layer over the portion of the metal dichalcogenide film and in contact with the metal dichalcogenide film after applying the plasma,
- wherein the first metal layer is a layer of one or more second metals selected from the group consisting of Ni, Mo, In, Ti, W, Sc, Pd, Pt, Co, and Ru;
- and
- forming a second metal layer comprising a third metal over the first metal layer,
- wherein the third metal is less reactive than the one or more second metals.
4 more elements
A method of fabricating a semiconductor device, comprising:
- forming a metal dichalcogenide film over a substrate,
- wherein the metal dichalcogenide film comprises a first metal and a chalcogen selected from the group consisting of S, Se, Te, and combinations thereof;
- forming a buffer layer over the metal dichalcogenide film;
- patterning the buffer layer to expose portions of the metal dichalcogenide film;
- plasma stripping the chalcogen from a surface layer of the exposed portions of the metal dichalcogenide film;
- forming a first metal layer over the exposed portions of the metal dichalcogenide film and in contact with the metal dichalcogenide film after the plasma stripping,
- wherein the first metal layer is a layer of one or more second metals selected from the group consisting of Ni, Mo, In, Ti, W, Sc, Pd, Pt, Co, and Ru;
- and
- forming a second metal layer comprising a third metal over the first metal layer,
- wherein the third metal is less reactive than the one or more second metals.
7 more elements
A method of fabricating a semiconductor device, comprising:
- forming a first metal dichalcogenide monolayer film over a substrate,
- forming a second metal dichalcogenide monolayer film over the first metal dichalcogenide monolayer film,
- wherein the first and second metal dichalcogenide films comprise a first metal and a chalcogen selected from the group consisting of S, Se, Te, and combinations thereof;
- patterning the second metal dichalcogenide monolayer film to expose portions of the first metal dichalcogenide monolayer film;
- applying a plasma to the exposed portions of the first metal dichalcogenide monolayer film;
- and
- forming a metal layer over the exposed portions of the first metal dichalcogenide monolayer film after applying the plasma.
4 more elements
Dependencies are inferred from the claim text.