Systems and methods for implementing select devices constructed from 2D materials
AssigneeInston, Inc.
InventorsQi Hu, Kang L. Wang
Life of this patent
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Abstract
Systems and methods in accordance with embodiments of the invention implement select devices constructed from 2D materials. In one embodiment, a crossbar memory system includes: a first set of connection lines; a second set of connection lines; and an array of memory cells, each memory cell including: a select device; and a memory device; where each memory cell is coupled to a unique combination of: at least one connection line from the first set of connection lines, and at least one connection line from the second set of connection lines; and where at least one select device includes a 2D material.
Claims14
A stacked crossbar memory system comprising:
- a plurality of memory sub-systems and at least one insulation layer, wherein each insulation layer separates two of the plurality of memory sub-systems, wherein each memory sub-system comprises:
- a first set of connection lines;
- a second set of connection lines;
- and
- an array of memory cells, each memory cell in the array comprising:
- a select device;
- and
- a memory device, wherein the memory device is one of:
- a spin-transfer torque random-access-memory device and a magneto-electric random-access-memory device;
- wherein:
- each memory cell in the array is coupled to a unique combination of one connection line in the first set of connection lines and one connection line in the second set of connection lines;
- at least one of the select devices of the array of memory cells is crystalline;
- and
- at least one of the select devices of the array of memory cells comprises a van der Waals heterostructure and thereby comprises a 2D material.
Dependencies are inferred from the claim text.