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US 2026/0164699 A1Published application
Semiconductor device and method of manufacturing the semiconductor device
AssigneesSamsung Electronics Co., Ltd., Seoul National University R&Db Foundation
InventorsHuije RYU, Gwanhyoung LEE, Yoona KIM, Donghoon MOON
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Abstract
Provided is a semiconductor device including a plurality of transition metal layers spaced apart from each other on a substrate, a channel layer between the plurality of transition metal layers, and a van der Waals material layer on the plurality of transition metal layers, wherein the van der Waals material layer may be a single layer.
Claims20
A semiconductor device comprising:
- a plurality of transition metal layers spaced apart from each other on a substrate;
- a channel layer between the plurality of transition metal layers;
- and
- a van der Waals material layer on at least one of the plurality of transition metal layers, wherein the van der Waals material layer is a single layer.
1 more element
A semiconductor device comprising:
- a source electrode and a drain electrode spaced apart from each other on a substrate;
- and
- a channel layer between the source electrode and the drain electrode, the channel layer having a same crystallinity as at least one of the source and drain electrodes.
A method of manufacturing a semiconductor device, the method comprising:
- forming a transition metal layer on a substrate;
- forming a single van der Waals material layer on the transition metal layer;
- forming a plurality of mask layers onto the van der Waals material layer so that the plurality of mask layers are spaced apart from each other and so that one or more regions of the van der Waals material layer are exposed;
- and
- forming a channel layer in the one or more region exposed by the plurality of mask layers.
2 more elements
Dependencies are inferred from the claim text.