Method of forming a semiconductor device using layered etching and repairing of damaged portions
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., National Taiwan University
InventorsShih-Yen Lin, Kuan-Chao Chen, Si-Chen Lee, Samuel C. Pan
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Abstract
A method of fabricating a semiconductor device includes plasma etching a portion of a plurality of metal dichalcogenide films comprising a compound of a metal and a chalcogen disposed on a substrate by applying a plasma to the plurality of metal dichalcogenide films. After plasma etching, a chalcogen is applied to remaining portions of the plurality of metal dichalcogenide films to repair damage to the remaining portions of the plurality of metal dichalcogenide films from the plasma etching. The chalcogen is S, Se, or Te.
Claims20
A method of fabricating a semiconductor device, comprising:
- plasma etching a portion of a plurality of metal dichalcogenide films comprising a compound of a metal and a chalcogen disposed on a substrate by applying a plasma to the plurality of metal dichalcogenide films;
- and
- after plasma etching, applying an additional quantity of the chalcogen to remaining portions of the plurality of metal dichalcogenide films to repair damage to the remaining portions of the plurality of metal dichalcogenide films caused by the plasma etching,
- wherein the chalcogen is S, Se, or Te.
A method of fabricating a semiconductor device, comprising:
- forming a first metal dichalcogenide film comprising a compound of a first metal and a first chalcogen on a substrate;
- forming a second metal dichalcogenide film comprising a compound of a second metal and a second chalcogen on the first metal dichalcogenide film;
- patterning the first metal dichalcogenide film and second metal dichalcogenide film to form a channel region comprising the first and second metal dichalcogenide films;
- selectively etching spaced-apart portions of the channel region to remove portions of the second metal dichalcogenide film, thereby exposing portions of the first metal dichalcogenide film;
- applying an additional quantity of the first chalcogen to at least exposed portions of the first metal dichalcogenide film;
- depositing a first conductive layer on the exposed portions of the first metal dichalcogenide film;
- depositing a dielectric layer over the second metal dichalcogenide film and the first conductive layer;
- and
- forming a second conductive layer over the dielectric layer,
- wherein the first and second chalcogens are S, Se, or Te.
A method of fabricating a semiconductor device, comprising:
- forming a first metal dichalcogenide monolayer film comprising a compound of a first metal and a first chalcogen on a substrate;
- forming a second metal dichalcogenide monolayer film comprising a compound of a second metal and a second chalcogen on the first metal dichalcogenide monolayer film;
- etching the second metal dichalcogenide monolayer film to form at least one opening exposing a portion of the first metal dichalcogenide monolayer film;
- and
- applying a vaporized chalcogen to at least the exposed portion of the first metal dichalcogenide monolayer film,
- wherein the first chalcogen, second chalcogen, and vaporized chalcogen are S, Se, or Te.
Dependencies are inferred from the claim text.