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US 12,112,946 B2Granted
Deposition of highly crystalline 2D materials
AssigneeImec Vzw
InventorsYuanyuan Shi, Benjamin Groven, Matty Caymax
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Abstract
A method for providing a film of one or more monolayers of transition metal dichalcogenides on a substrate is disclosed. The method includes providing a substrate; depositing at least one monolayer of the transition metal dichalcogenides on the substrate; and selectively removing superficial islands on top of the at least one monolayer by thermal etching.
Claims8
A method for providing a film of one or more monolayers of transition metal dichalcogenides on a substrate, the method comprising:
- providing a substrate;
- depositing at least one monolayer of the transition metal dichalcogenides on the substrate;
- and
- selectively removing superficial islands on top of the at least one monolayer by thermal etching with Cl2 as etchant, wherein the selective removing step is performed at a temperature of at least 500° C.
1 more element
Dependencies are inferred from the claim text.