H10D 62/824
Comprising only group iii-v materials heterojunctions
Official title: comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
H10D62/824 (Comprising only group iii-v materials heterojunctions) appears on 2,991 US grants and 3,433 published applications in this corpus.
Search patents in H10D- Granted patents
- 2,991
- Published applications
- 3,433
- Assignees
- 603
- Inventors
- 3,830
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 2 | 0 |
| 1978 | 1 | 0 |
| 1979 | 3 | 0 |
| 1980 | 4 | 0 |
| 1981 | 2 | 0 |
| 1982 | 3 | 0 |
| 1983 | 4 | 0 |
| 1984 | 3 | 0 |
| 1985 | 4 | 0 |
| 1986 | 5 | 0 |
| 1987 | 8 | 0 |
| 1988 | 10 | 0 |
| 1989 | 23 | 0 |
| 1990 | 17 | 0 |
| 1991 | 20 | 0 |
| 1992 | 17 | 0 |
| 1993 | 11 | 0 |
| 1994 | 11 | 0 |
| 1995 | 11 | 0 |
| 1996 | 12 | 0 |
| 1997 | 12 | 0 |
| 1998 | 9 | 0 |
| 1999 | 13 | 0 |
| 2000 | 9 | 0 |
| 2001 | 11 | 5 |
| 2002 | 17 | 15 |
| 2003 | 11 | 24 |
| 2004 | 18 | 21 |
| 2005 | 16 | 17 |
| 2006 | 14 | 28 |
| 2007 | 11 | 20 |
| 2008 | 14 | 35 |
| 2009 | 27 | 52 |
| 2010 | 29 | 41 |
| 2011 | 34 | 61 |
| 2012 | 44 | 67 |
| 2013 | 60 | 143 |
| 2014 | 103 | 201 |
| 2015 | 188 | 272 |
| 2016 | 273 | 290 |
| 2017 | 275 | 299 |
| 2018 | 249 | 228 |
| 2019 | 231 | 242 |
| 2020 | 224 | 281 |
| 2021 | 170 | 222 |
| 2022 | 173 | 242 |
| 2023 | 157 | 181 |
| 2024 | 184 | 154 |
| 2025 | 175 | 141 |
| 2026 | 67 | 151 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device with nanowire heterojunction and manufacturing method thereof29 Sep 2026US 12,751,032 B2Enkris Semiconductor, Inc.
- Charge balanced power transistors29 Sep 2026US 12,751,036 B2Virginia Tech Intellectual Properties, Inc.
- Quantum heterostructures, related devices and methods for manufacturing the same29 Sep 2026US 12,751,060 B2Ecole Polytechnique de Montreal
- Resistor structure including charge control layer22 Sep 2026US 12,745,407 B2Texas Instruments Incorporated
- FET device with AlGaN buffer layer and thin InGaN layer15 Sep 2026US 12,740,086 B2Northrop Grumman Systems Corporation
- Semiconductor structure and method of manufacture8 Oct 2026US 2026/0313943 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Nitride semiconductor device and manufacturing method of nitride semiconductor device8 Oct 2026US 2026/0313996 A1Wavetek Microelectronics Corporation
- Iii-v heterojunction bipolar transistor and its manufacturing method1 Oct 2026US 2026/0304809 A1Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Scalable circuit-under-pad device topologies for lateral gan power transistors1 Oct 2026US 2026/0304868 A1GaN Systems Inc.
- Group iii nitride semiconductor epitaxial wafer and electronic device1 Oct 2026US 2026/0304875 A1Panasonic Holdings Corporation
Most cited
By later US patents
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Semiconductor structures and methods with high mobility and high energy bandgap materials544US 8,836,016 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Integrated heterostructures of group III-V nitride semiconductor materials including epitaxial ohmic contact comprising multiple quantum well413US 6,046,464 ANorth Carolina State University · 2000
- Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same357US 5,679,965 ANorth Carolina State University · 1997
- Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same351US 5,670,798 ANorth Carolina State University · 1997