FET device with AlGaN buffer layer and thin InGaN layer
AssigneeNorthrop Grumman Systems Corporation
InventorRobert Coffie
Life of this patent
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Abstract
A high electron mobility transistor (HEMT) device including a substrate, an AlGaN buffer layer on the substrate, where the buffer layer has a percentage of Al between 1% and 6%, an InGaN layer on the buffer layer, where the InGaN layer has about 10% of In, a GaN channel layer on the InGaN layer, and an AlGaN barrier layer on the channel layer. In one embodiment, the buffer layer is Al0.04Ga0.96N, the InGaN layer is about 2 nm thick, and the barrier layer is Al0.34Ga0.66N. The HEMT device may include a nucleation layer between the substrate and the buffer layer, a GaN spacer layer between the buffer layer and the InGaN layer, and/or an AlN interlayer between the channel layer and the barrier layer.
Claims19
A field effect transistor (FET) device comprising:
- a substrate;
- an AlGaN buffer layer on the substrate, said buffer layer having a percentage of Al that is less than 10%;
- an InGaN layer on the buffer layer, said InGaN layer having a thickness that is less than 20 nm;
- a GaN spacer layer between and in contact with the buffer layer and the InGaN layer;
- a channel layer on the InGaN layer;
- and
- a barrier layer on the channel layer.
A high electron mobility transistor (HEMT) device comprising:
- a substrate;
- an AlGaN buffer layer on the substrate, said buffer layer having a percentage of Al that is between 1% and 6%;
- an InGaN layer on the buffer layer, said InGaN layer having about 10% of In;
- a GaN spacer layer between and in contact with the buffer layer and the InGaN layer;
- a GaN channel layer on the InGaN layer;
- and
- an AlGaN barrier layer on the channel layer.
A high electron mobility transistor (HEMT) device comprising:
- a substrate;
- a nucleation layer on the substrate;
- an AlGaN buffer layer on the nucleation layer, said buffer layer having a percentage of Al of about 4%;
- a GaN spacer layer on and in contact with the buffer layer;
- an InGaN layer on and in contact with the spacer layer, said InGaN layer having about 10% of In and a thickness of about 2 nm;
- a GaN channel layer on the InGaN layer;
- an AlN interlayer on the channel layer;
- and
- an AlGaN barrier layer on the interlayer layer.
Dependencies are inferred from the claim text.