H10D 62/826
Comprising only group ii-vi materials heterojunctions
Official title: comprising only Group II-VI materials heterojunctions, e.g. CdTe/HgTe heterojunctions
H10D62/826 (Comprising only group ii-vi materials heterojunctions) appears on 94 US grants and 99 published applications in this corpus.
Search patents in H10D- Granted patents
- 94
- Published applications
- 99
- Assignees
- 67
- Inventors
- 186
- Latest grant
- 25 Feb 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 4 | 0 |
| 1992 | 2 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 2 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 2 |
| 2003 | 2 | 0 |
| 2004 | 0 | 4 |
| 2005 | 0 | 4 |
| 2006 | 0 | 1 |
| 2007 | 1 | 4 |
| 2008 | 3 | 0 |
| 2009 | 2 | 7 |
| 2010 | 7 | 7 |
| 2011 | 4 | 6 |
| 2012 | 5 | 2 |
| 2013 | 4 | 4 |
| 2014 | 2 | 13 |
| 2015 | 11 | 12 |
| 2016 | 10 | 6 |
| 2017 | 5 | 5 |
| 2018 | 4 | 4 |
| 2019 | 6 | 4 |
| 2020 | 2 | 4 |
| 2021 | 2 | 4 |
| 2022 | 1 | 0 |
| 2023 | 4 | 4 |
| 2024 | 2 | 1 |
| 2025 | 1 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Heterostructure oxide semiconductor vertical gate-all-around (VGAA) transistor and methods for making the same25 Feb 2025US 12,238,914 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Heterostructure of an electronic circuit having a semiconductor device17 Sep 2024US 12,094,964 B2NaMLab gGmbH
- Vertical heterostructure semiconductor memory cell and methods for making the same9 Apr 2024US 11,956,940 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Heterojunction material and method of preparing the same22 Aug 2023US 11,735,417 B2Research & Business Foundation Sungkyunkwan University
- Heterostructure of an electronic circuit having a semiconductor device11 Jul 2023US 11,699,749 B2NaMLab gGmbH
- Heterostructure oxide semiconductor vertical gate-all-around (vgaa) transistor and methods for making the same15 May 2025US 2025/0159862 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Vertical heterostructure semiconductor memory cell and methods for making the same27 Jun 2024US 2024/0215217 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Heterostructure of an Electronic Circuit Having a Semiconductor Device12 Oct 2023US 2023/0327012 A1NaMLab gGmbH
- Heterostructure oxide semiconductor vertical gate-all-around (vgaa) transistor and methods for making the same17 Aug 2023US 2023/0262953 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Vertical heterostructure semiconductor memory cell and methods for making the same1 Jun 2023US 2023/0171937 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Gallium nitride materials and methods249US 6,617,060 B2Nitronex Corporation · 2003
- Gallium nitride materials and methods144US 6,649,287 B2Nitronex Corporation · 2003
- Method for reducing or eliminating interface defects in mismatched semiconductor epilayers110US 5,156,995 ACornell Research Foundation, Inc. · 1992
- Method for reducing or eliminating interface defects in mismatched semiconductor eiplayers82US 5,032,893 ACornell Research Foundation, Inc. · 1991
- Semiconductor nanocrystal heterostructures having specific charge carrier confinement47US 7,390,568 B2Massachusetts Institute of Technology · 2008