Back to results
US 11,735,417 B2Granted
Heterojunction material and method of preparing the same
AssigneeResearch & Business Foundation Sungkyunkwan University
InventorsTaesung Kim, Hyunho Seok, Hyeong U Kim, Jinill Cho, Kanade Chaitanya Kaluram
Life of this patent
Estimating the term…
Abstract
A method of preparing a heterojunction material, includes forming a first transition metal on a substrate, forming a second transition metal on the first transition metal, and performing a plasma process containing a chalcogen source on the substrate. The first transition metal and the second transition metal are different from each other.
Claims11
A method of preparing a heterojunction material, the method comprising:
- forming a first transition metal on a substrate;
- forming a second transition metal on the first transition metal different from the first transition metal;
- and
- performing a plasma process comprising:
- providing a chalcogen source to generate an ionized chalcogen source;
- and
- converting the first transition metal and the second transition metal on the substrate to a first transition metal chalcogenide and a second transition metal chalcogenide, respectively, by the plasma process.
4 more elements
Dependencies are inferred from the claim text.