H10D 62/822
Comprising only group iv materials heterojunctions
Official title: comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
H10D62/822 (Comprising only group iv materials heterojunctions) appears on 7,085 US grants and 9,552 published applications in this corpus.
Search patents in H10D- Granted patents
- 7,085
- Published applications
- 9,552
- Assignees
- 563
- Inventors
- 6,800
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 2 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 3 | 0 |
| 1988 | 0 | 0 |
| 1989 | 6 | 0 |
| 1990 | 0 | 0 |
| 1991 | 5 | 0 |
| 1992 | 3 | 0 |
| 1993 | 7 | 0 |
| 1994 | 6 | 0 |
| 1995 | 6 | 0 |
| 1996 | 0 | 0 |
| 1997 | 4 | 0 |
| 1998 | 6 | 0 |
| 1999 | 9 | 0 |
| 2000 | 5 | 0 |
| 2001 | 12 | 1 |
| 2002 | 7 | 13 |
| 2003 | 15 | 34 |
| 2004 | 23 | 31 |
| 2005 | 23 | 49 |
| 2006 | 31 | 92 |
| 2007 | 36 | 114 |
| 2008 | 69 | 185 |
| 2009 | 88 | 171 |
| 2010 | 139 | 148 |
| 2011 | 146 | 167 |
| 2012 | 145 | 232 |
| 2013 | 180 | 222 |
| 2014 | 241 | 276 |
| 2015 | 313 | 493 |
| 2016 | 508 | 579 |
| 2017 | 555 | 518 |
| 2018 | 527 | 432 |
| 2019 | 469 | 513 |
| 2020 | 507 | 594 |
| 2021 | 421 | 513 |
| 2022 | 462 | 754 |
| 2023 | 456 | 1024 |
| 2024 | 605 | 798 |
| 2025 | 730 | 1053 |
| 2026 | 312 | 546 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Gate-all-around integrated circuit structures having fin stack isolation22 Sep 2026US 12,745,416 B2Intel Corporation
- RF devices with nanotube particles for enhanced performance and methods of forming the same15 Sep 2026US 12,740,412 B2Qorvo US, Inc.
- Leakage reduction for multi-gate devices25 Aug 2026US 12,720,784 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Nanosheet channel formation method and structure25 Aug 2026US 12,720,785 B2Taiwan Semicondutor Manufacturing Co.
- Semiconductor device and method of manufacturing same25 Aug 2026US 12,720,786 B2Samsung Electronics Co., Ltd.
- Memory device and manufacturing method thereof8 Oct 2026US 2026/0313901 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Doping profile for strained source/drain region8 Oct 2026US 2026/0313975 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Wide bandgap material in drift well of semiconductor device8 Oct 2026US 2026/0313993 A1
- Method for forming source/drain contacts8 Oct 2026US 2026/0314054 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Methods of forming gate-all-around (gaa) devices1 Oct 2026US 2026/0304842 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- FINFETs with wrap-around silicide and method forming the same1,436US 9,608,116 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Apparatus and method for forming semiconductor contacts1,331US 8,772,109 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Aligned gate-all-around structure849US 9,412,828 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Strained structure of semiconductor device and method of making the strained structure614US 9,171,929 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015