H10D 48/01
Manufacture or treatment
H10D48/01 (Manufacture or treatment) appears on 515 US grants and 558 published applications in this corpus.
Search patents in H10D- Granted patents
- 515
- Published applications
- 558
- Assignees
- 272
- Inventors
- 1,219
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 2 | 0 |
| 1993 | 5 | 0 |
| 1994 | 7 | 0 |
| 1995 | 6 | 0 |
| 1996 | 9 | 0 |
| 1997 | 5 | 0 |
| 1998 | 3 | 0 |
| 1999 | 4 | 0 |
| 2000 | 3 | 0 |
| 2001 | 2 | 0 |
| 2002 | 2 | 6 |
| 2003 | 1 | 1 |
| 2004 | 3 | 7 |
| 2005 | 2 | 5 |
| 2006 | 2 | 5 |
| 2007 | 4 | 5 |
| 2008 | 2 | 7 |
| 2009 | 6 | 8 |
| 2010 | 4 | 11 |
| 2011 | 8 | 11 |
| 2012 | 10 | 20 |
| 2013 | 22 | 55 |
| 2014 | 40 | 43 |
| 2015 | 54 | 55 |
| 2016 | 40 | 32 |
| 2017 | 35 | 24 |
| 2018 | 33 | 59 |
| 2019 | 50 | 42 |
| 2020 | 38 | 35 |
| 2021 | 27 | 21 |
| 2022 | 22 | 26 |
| 2023 | 10 | 20 |
| 2024 | 19 | 27 |
| 2025 | 18 | 22 |
| 2026 | 14 | 11 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Resistor structure including charge control layer22 Sep 2026US 12,745,407 B2Texas Instruments Incorporated
- Semiconductor device with programmable insulating layer and method for fabricating the same23 Jun 2026US 12,666,609 B2Nanya Technology Corporation
- Lamp heating module for an epitaxy process chamber16 Jun 2026US 12,660,554 B2APPLIED Materials.Inc.
- High-breakdown voltage, low RDSON electrical component with dissimilar semiconductor layers19 May 2026US 12,635,200 B2Icemos Technology Ltd.
- High-voltage depletion-mode current source, transistor, and fabrication methods19 May 2026US 12,635,221 B2Texas Instruments Incorporated
- Method for manufacturing nanodevice based on single-crystalline copper (cu) thin film and nanodevice having ballistic transport characteristics24 Sep 2026US 2026/0293221 A1Postech Research and Business Development Foundation
- High-Breakdown Voltage, Low RDSON Electrical Component with Dissimilar Semiconductor Layers3 Sep 2026US 2026/0262272 A1Icemos Technology Ltd.
- Semiconductor Quantum Dot Device and Fabrication Method, Signal Reading Method and Manipulation Method Therefor13 Aug 2026US 2026/0239677 A1Origin Quantum Computing Technology (Hefei) Co., Ltd
- Sic semiconductor device and method for manufacturing the same25 Jun 2026US 2026/0181980 A1Rohm Co., Ltd.
- Spin qubit electronic device14 May 2026US 2026/0136609 A1Commissariat A L' Energie Atomique Et Aux Energies Alternatives
Most cited
By later US patents
- Semiconductor device using whiskers265US 5,362,972 AHitachi, Ltd. · 1994
- Semiconductor structure comprising a highly doped conductive channel region and method for producing a semiconductor structure122US 7,615,802 B2SiCED Electronics Development GmbH & Co. KG · 2009
- Quantum effect device86US 5,640,022 ASanyo Electric Co., Ltd. · 1997
- Modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit81US 6,479,844 B2University of Connecticut · 2002
- Semiconductor device including a resonant tunneling diode structure with electron mean free path control layers66US 10,170,603 B2Atomera Incorporated · 2019