Method for manufacturing nanodevice based on single-crystalline copper (cu) thin film and nanodevice having ballistic transport characteristics
AssigneesPusan National University Industry-University Cooperation Foundation, Postech Research and Business Development Foundation
InventorsSe Young JEONG, Gilho LEE, Yongjin CHO
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Abstract
A nanodevice having ballistic transport characteristics, includes a single-crystalline metal thin film with removed grain boundaries. The single-crystalline metal thin film is formed to suppress electron scattering and includes conduction paths formed to have a nanometer width through electron beam lithography and an ion etching process. The conduction path exhibits an electrical response, in which negative bend resistance occurs when electrons are transported at a low temperature.
Claims17
A nanodevice having ballistic transport characteristics, the nanodevice including a single-crystalline metal thin film with removed grain boundaries, wherein the single-crystalline metal thin film is formed to suppress electron scattering, and includes conduction paths formed to have a nanometer width through electron beam lithography and an ion etching process, and the conduction path exhibits an electrical response, in which negative bend resistance occurs when electrons are transported at a low temperature.
A method for manufacturing a nanodevice based on a single-crystalline copper (Cu) thin film, the method comprising the steps of:
- forming a single-crystalline copper thin film with removed grain boundaries, aligned in a (111) crystal plane direction on a sapphire (Al2O3) substrate, using an atomic sputtering epitaxy (ASE) method;
- forming a nanometer-wide pattern by performing electron beam lithography on the single-crystalline copper thin film;
- forming a conduction path by performing argon (Ar) ion etching on the basis of the pattern;
- completing the nanodevice by forming electrodes at both ends of the conduction path;
- and
- confirming whether an electrical response, in which negative bend resistance occurs when electrons are transported, is exhibited through the conduction path.
Dependencies are inferred from the claim text.