Spin qubit electronic device
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsBiel Martinez I Diaz, Jing Li
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Abstract
An electronic device including: a semiconductor nanowire; at least two separate first control gates, arranged next to each other on the side of a first lateral surface of the nanowire, and configured to each control the electrostatic potential of a quantum dot intended to be formed in the nanowire; at least one second control gate arranged on the side of a second lateral surface, opposite to the first lateral surface, of the nanowire, and configured to control the electrostatic potential of a coupling region intended to be formed between two quantum dots; wherein all the first control gates are arranged on the side of the first lateral surface only, and the or all the second control gates are arranged on the side of the second lateral surface only.
Claims18
Electronic device comprising:
- a semiconductor nanowire;
- at least two separate first control gates, arranged next to each other on the side of a first lateral surface of the semiconductor nanowire, and configured to each control the electrostatic potential of a quantum dot intended to be formed in the semiconductor nanowire;
- at least one second control gate arranged on the side of a second lateral surface, opposite to the first lateral surface, of the semiconductor nanowire, and configured to control the electrostatic potential of a coupling region intended to be formed between two quantum dots;
- wherein all the first control gates of the electronic device are arranged on the side of the first lateral surface only, and the or all the second control gates of the electronic device are arranged on the side of the second lateral surface only,
- and wherein no portion of the second gate is arranged between the first gates (106).
Method of forming an electronic device, comprising:
- forming of at least two separate first control gates, arranged next to each other on the side of a first lateral surface of a semiconductor nanowire, and configured to each control the electrostatic potential of at least one quantum dot intended to be formed in the semiconductor nanowire;
- forming of at least one second control gate arranged on the side of a second lateral surface, opposite to the first lateral surface, of the semiconductor nanowire, and configured to control the electrostatic potential of a coupling region intended to be formed between two quantum dots;
- wherein all the first control gates of the electronic device are arranged on the side of the first lateral surface only, and the or all the second control gates of the electronic device are arranged on the side of the second lateral surface only,
- and wherein no portion of the second gate is arranged between the first gates.
Dependencies are inferred from the claim text.