Semiconductor device with programmable insulating layer and method for fabricating the same

A semiconductor device, comprising:

• a substrate comprising an array region and a peripheral region positioned adjacent to the array region;
• a valley inwardly positioned on a top surface of the peripheral region of the substrate;
• a programmable insulating layer conformally positioned on the valley and comprising a V-shaped cross-sectional profile;
• a top electrode positioned on the programmable insulating layer;
• a peripheral gate structure positioned on the top surface of the peripheral region of the substrate;
• and
• a bottom conductive layer positioned in the substrate and contacting the programmable insulating layer;
• wherein the programmable insulating layer is configured to be blown out under a programming voltage;
• wherein a top surface of the top electrode and a top surface of the peripheral gate structure are substantially coplanar;
• wherein the top electrode comprises a bottom portion positioned on the programmable insulating layer and a top portion positioned on the bottom portion;
• wherein the peripheral gate structure comprises:
• a gate dielectric layer positioned on the top surface of the peripheral region of the substrate;
• a gate bottom conductive layer positioned on the gate dielectric layer;
• and
• a gate top conductive layer positioned on the gate bottom conductive layer;
• wherein the programmable insulating layer comprises oxides, nitrides, oxynitrides, silicates, aluminates, titanates, nitrides, high-k dielectric materials, or a combination thereof;
• wherein a crystal orientation of the substrate is <110>, <100>, or <111>;
• wherein the bottom portion comprises doped polycrystalline silicon, doped polycrystalline germanium, or doped polycrystalline silicon germanium.