High-breakdown voltage, low RDSON electrical component with dissimilar semiconductor layers

A semiconductor device, comprising:

• a substrate;
• a first semiconductor layer comprising a first semiconductor material as substantially defect-free silicon carbide or cubic silicon carbide and disposed over the substrate;
• and
• a second semiconductor layer comprising a second semiconductor material dissimilar from the first semiconductor material and disposed over the first semiconductor layer, wherein the second semiconductor layer includes,
• (a) a trench formed through the second semiconductor layer and extending into the first semiconductor layer,
• (b) a first column of semiconductor material having a first conductivity type and formed within the second semiconductor layer adjacent to the trench,
• (c) a second column of semiconductor material having a second conductivity type opposite the first conductivity type and formed within the second semiconductor layer adjacent to the first column of semiconductor material opposite the trench, and
• (d) a source region formed over the first column of semiconductor material.

A semiconductor device, comprising:

• a substrate;
• a first semiconductor layer being substantially defect-free silicon carbide or cubic silicon carbide and formed in contact with the substrate;
• and
• a second semiconductor layer formed over the first semiconductor layer, wherein the first semiconductor layer includes a first semiconductor material dissimilar from a second semiconductor material of the second semiconductor layer;
• a trench formed through the second semiconductor layer and extending into the first semiconductor layer;
• a first column of semiconductor material having a first conductivity type and formed within the second semiconductor layer adjacent to the trench;
• a second column of semiconductor material having a second conductivity type opposite the first conductivity type and formed within the second semiconductor layer adjacent to the first column of semiconductor material opposite the trench;
• and
• a source region formed over the first column of semiconductor material.