Semiconductor Quantum Dot Device and Fabrication Method, Signal Reading Method and Manipulation Method Therefor

Abstract

The present application discloses a semiconductor quantum dot device structure, fabrication method, signal reading method and manipulation method. The structure includes: a silicon substrate formed to be provided with a first ion region and a second ion region; a dielectric layer located on the silicon substrate layer, with a carrier channel formed at an interface between the silicon substrate and the dielectric layer; the first electrode in ohmic contact with the first ion region, and the second electrode in ohmic contact with the second ion region; A confining electrode located on the dielectric layer, configured to confine carriers within the carrier channel to form quantum dots; and a magnetic electrode, the magnetic electrode is configured to form a magnetic field gradient at the interface and to The quantum dots are manipulated. The application also discloses a semiconductor quantum dot device.

Dependencies are inferred from the claim text.