Modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit

A multifunctional optoelectronic semiconductor device, comprising an epitaxially grown distributed bragg reflector (DBR) mirror upon which is deposited;

• a first sequence of layers to implement a modulation-doped bipolar field-effect transistor with electrons (n type) as its majority carrier, its emitter deposited on said DBR mirror and its collector as a top surface layer, said n type bipolar transistor having a p type inversion channel at a modulation-doped interface performing as a field-effect control element in the role of a conventional base region and said bipolar transistor layer structure also implementing a p channel heterostructure field-effect transistor (PHFET) layer structure with said emitter layer performing in the role of a gate contact layer for said PHFET;
• a second sequence of layers deposited on said first sequence of layers, to implement a modulation-doped bipolar field-effect transistor with holes (p type) as its majority carrier, its collector layer being common with said collector of said n type bipolar transistor and its emitter as a top surface layer, said p type bipolar transistor having an n type inversion channel at a modulation-doped interface performing as a field-effect control element in the role of a conventional base region and said bipolar transistor layer structure also implementing an n channel heterostructure field-effect transistor (NHFET) layer structure with said emitter surface layer performing in the role of a gate contact layer for said NHFET.