H10D 30/686
Using hot carriers produced by avalanche breakdown of pn junctions
Official title: {using hot carriers produced by avalanche breakdown of PN junctions, e.g. floating gate avalanche injection MOS [FAMOS]}
H10D30/686 (Using hot carriers produced by avalanche breakdown of pn junctions) appears on 109 US grants and 33 published applications in this corpus.
Search patents in H10D- Granted patents
- 109
- Published applications
- 33
- Assignees
- 53
- Inventors
- 146
- Latest grant
- 8 Apr 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 5 | 0 |
| 1978 | 1 | 0 |
| 1979 | 3 | 0 |
| 1980 | 3 | 0 |
| 1981 | 2 | 0 |
| 1982 | 3 | 0 |
| 1983 | 2 | 0 |
| 1984 | 2 | 0 |
| 1985 | 3 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 6 | 0 |
| 1991 | 3 | 0 |
| 1992 | 6 | 0 |
| 1993 | 5 | 0 |
| 1994 | 5 | 0 |
| 1995 | 5 | 0 |
| 1996 | 1 | 0 |
| 1997 | 6 | 0 |
| 1998 | 1 | 0 |
| 1999 | 3 | 0 |
| 2000 | 3 | 0 |
| 2001 | 7 | 1 |
| 2002 | 1 | 3 |
| 2003 | 3 | 3 |
| 2004 | 3 | 4 |
| 2005 | 3 | 4 |
| 2006 | 6 | 7 |
| 2007 | 1 | 2 |
| 2008 | 3 | 2 |
| 2009 | 3 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 1 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 0 |
| 2017 | 1 | 3 |
| 2018 | 1 | 0 |
| 2019 | 1 | 1 |
| 2020 | 0 | 1 |
| 2021 | 1 | 1 |
| 2022 | 1 | 1 |
| 2023 | 1 | 0 |
| 2024 | 0 | 0 |
| 2025 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
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- Protection against electrostatic discharges and filtering30 May 2023US 11,664,367 B2STMicroelectronics (Tours) SAS
- Protection against electrostatic discharges and filtering10 May 2022US 11,329,040 B2STMicroelectronics (Tours) SAS
- Defect reduction of semiconductor layers and semiconductor devices by anneal and related methods25 May 2021US 11,018,023 B2Semiconductor Components Industries, LLC
- Thermal event sensor22 Oct 2019US 10,451,489 B2The Charles Stark Draper Laboratory, Inc.
- Protection against electrostatic discharges and filtering28 Jul 2022US 2022/0238507 A1STMicroelectronics (Tours) SAS
- Defect reduction of semiconductor layers and semiconductor devices by anneal and related methods8 Apr 2021US 2021/0104415 A1Semiconductor Components Industries, LLC
- Defect reduction of semiconductor layers and semiconductor devices by anneal and related methods21 May 2020US 2020/0161142 A1Semiconductor Components Industries, LLC
- Protection against electrostatic discharges and filtering26 Sep 2019US 2019/0296005 A1STMicroelectronics (Tours) SAS
- Multi-time programmable non-volatile memory cell and associated circuits5 Oct 2017US 2017/0287559 A1Chengdu Monolithic Power Systems Co., Ltd.
Most cited
By later US patents
- Non-volatile semiconductor memory device with facility of storing tri-level data274US 5,021,999 AMitsubishi Denki Kabushiki Kaisha · 1991
- Semiconductor floating gate device having improved channel-floating gate interaction107US 5,260,593 AMicron Technology, Inc. · 1993
- Method of fabricating a fast programmable flash E.sup.2 PROM cell105US 6,034,896 AThe University of Toronto Innovations Foundation · 2000
- Method of forming a non-volatile memory device96US 6,214,666 B1Vantis Corporation · 2001
- Non-volatile semiconductor memory device93US 4,016,588 ANippon Electric Co., Ltd. · 1977