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US 12,272,566 B2Granted
Defect reduction of semiconductor layers and semiconductor devices by anneal and related methods
AssigneeSemiconductor Components Industries, LLC
InventorAli Salih
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Abstract
Systems and methods of the disclosed embodiments include reducing defects in a semiconductor layer. The defects may be reduced by forming the semiconductor layer on a substrate, removing at least a portion the substrate from an underside of the semiconductor layer, and annealing the semiconductor layer to reduce the defects in the layer. The annealing includes focusing energy at the layer.
Claims20
A method, comprising:
- growing a semiconductor layer on a substrate;
- removing at least a portion of the substrate from an underside portion of the semiconductor layer;
- annealing the semiconductor layer to reduce a number of defects in the semiconductor layer using a laser directed to at least a topside portion of the semiconductor layer while supporting the semiconductor layer with a support structure during annealing to prevent sagging of the semiconductor layer;
- and
- replacing the at least the portion of the substrate with a replaced substrate layer.
2 more elements
A method of fabricating a semiconductor device, comprising:
- growing a layer of gallium nitride (GaN) on a substrate layer;
- removing at least a portion of the substrate layer from the layer of GaN and not removing an outer support ring of the substrate layer;
- after the at least the portion of the substrate layer has been removed, annealing the layer of GaN to reduce defects in the layer of GaN;
- replacing the at least the portion of the substrate layer with a replaced substrate layer within the outer support ring;
- and
- forming a gate, a source, and a drain on the layer of GaN.
3 more elements
A method, comprising:
- growing a semiconductor layer on a substrate;
- removing at least a portion of the substrate to expose an underside portion of the semiconductor layer and not removing an outer support;
- annealing the semiconductor layer to reduce a number of defects in the semiconductor layer using a laser directed from a bottom of the semiconductor layer toward the underside portion of the semiconductor layer;
- replacing the at least the portion of the substrate with a replaced substrate layer within the outer support;
- and
- forming a gate, a source, and a drain on a topside of the semiconductor layer.
3 more elements
Dependencies are inferred from the claim text.