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AssigneeThe University of Toronto Innovations Foundation
InventorsJeewika Chandanie Ranaweera, Ivan Kalastirsky, Elvira Gulersen, Wai Tung Ng, Clement Andre T. Salama
Estimating the term…
A flash E.sup.2 PROM cell having source and drain regions disposed in a substrate, a channel region intermediate to the source and drain regions, a tunnel dielectric layer overlying the channel region, a floating gate overlying the tunnel dielectric layer, an inter-poly dielectric layer overlying the floating gate, and a control gate overlying the inter-poly dielectric layer. The flash E.sup.2 PROM cell further having a highly doped p.sup.+ pocket implant covering a portion of the cell width and adjacent to at least one of the drain and source regions. The flash E.sup.2 PROM cell is comprised of two sections butted together. The portion (width-wise) that is covered by the highly doped p.sup.+ pocket implant is referred to as a program section. The remaining portion (width-wise) not covered by the highly doped p.sup.+ pocket implant resembles a conventional flash E.sup.2 PROM cell and is referred to as a sense section. The highly doped p.sup.+ pocket implant and the n.sup.+ drain and/or source regions create a junction having narrow depletion width so that when the junction is reversed biased, an electric field is created for generating hot electrons for storage on the floating gate, thereby programming the flash E.sup.2 PROM cell when a high positive potential is applied to the control gate.
In a flash E.sup.2 PROM cell having n.sup.+ source and drain regions disposed in a p-type substrate, a channel region intermediate to said source and drain regions, a tunnel dielectric layer overlying said channel region, a floating gate overlying said tunnel dielectric layer, an inter-poly dielectric layer overlying said floating gate and a control gate overlying said inter-poly dielectric layer, the improvement comprising a highly doped p.sup.+ pocket implant adjoining one of said drain and source regions along a portion of the width of said cell for creating a metalurgical junction having narrow depletion width, said portion of the width of said cell defining a program section of said cell and the remaining width of said cell defining a sense section thereof.
In a flash E.sup.2 PROM cell having n.sup.+ source and drain regions disposed in a p-type substrate, a channel region intermediate to said source and drain regions, a tunnel dielectric layer overlying said channel region, a floating gate overlying said tunnel dielectric layer, an inter-poly dielectric layer overlying said floating gate and a control gate overlying said inter-poly dielectric layer, the improvement comprising a pair of highly doped p.sup.+ pocket implants adjoining respective ones of said drain and source regions along a portion of the width of said cell for creating a pair of metalurgical junctions each having narrow depletion width, said portion of the width of said cell defining a program section of said cell and the remaining width of said cell defining a sense section thereof.
Dependencies are inferred from the claim text.