Protection against electrostatic discharges and filtering
AssigneeSTMicroelectronics (Tours) SAS
InventorPatrick Poveda
Life of this patent
Estimating the term…
Abstract
An electronic component includes first and second separate semiconductor regions. A third semiconductor region is arranged under and between the first and second semiconductor regions. The first and third semiconductor regions define electrodes of a first diode. The second and third semiconductor regions define electrodes of a second diode. The first diode is an avalanche diode.
Claims22
An electronic component, comprising:
- first and second semiconductor regions;
- and
- a third semiconductor region arranged under the first and second semiconductor regions and further extending continuously between the first and second semiconductor regions in an unbroken fashion to separate the first semiconductor region from the second semiconductor region;
- wherein the first and third semiconductor regions define electrodes of a first diode, the first diode being an avalanche diode;
- and
- wherein the second and third semiconductor regions define electrodes of a second diode.
An electronic component, comprising:
- first and second semiconductor regions;
- and
- a third semiconductor region arranged under the first and second semiconductor regions and further extending between the first and second semiconductor regions to separate the first semiconductor region from the second semiconductor region;
- wherein the first and third semiconductor regions define electrodes of a first diode, the first diode being an avalanche diode;
- wherein the second and third semiconductor regions define electrodes of a second diode;
- wherein the third semiconductor region is located on an electrically insulating layer;
- and
- wherein the electrically insulating layer covers a support having an electric resistivity greater than 1,500 Ω/cm.
An electronic component, comprising:
- first and second semiconductor regions;
- a third semiconductor region arranged under the first and second semiconductor regions and further extending between the first and second semiconductor regions to separate the first semiconductor region from the second semiconductor region;
- wherein the first and third semiconductor regions define electrodes of a first diode, the first diode being an avalanche diode;
- wherein the second and third semiconductor regions define electrodes of a second diode;
- and
- a third diode connected in parallel with the first and second diodes.
An electronic component, comprising:
- first and second semiconductor regions;
- a third semiconductor region arranged under the first and second semiconductor regions and further extending between the first and second semiconductor regions to separate the first semiconductor region from the second semiconductor region;
- wherein the first and third semiconductor regions define electrodes of a first diode, the first diode being an avalanche diode;
- wherein the second and third semiconductor regions define electrodes of a second diode;
- and
- under the first semiconductor region, an additional semiconductor region of a same conductivity type as the third semiconductor region and more heavily doped than the third semiconductor region.
An electronic component, comprising:
- first and second semiconductor regions;
- a third semiconductor region arranged under the first and second semiconductor regions and further extending between the first and second semiconductor regions to separate the first semiconductor region from the second semiconductor region;
- wherein the first and third semiconductor regions define electrodes of a first diode, the first diode being an avalanche diode;
- wherein the second and third semiconductor regions define electrodes of a second diode;
- and
- a fourth semiconductor region that is located above the third semiconductor region and which defines an electrode of a Schockley diode, and wherein another electrode of the Schockley diode is defined by the second semiconductor region.
An electronic component, comprising;
- first and second semiconductor regions;
- a third semiconductor region arranged under the first and second semiconductor regions and further extending between the first and second semiconductor regions to separate the first semiconductor region from the second semiconductor region;
- wherein the first and third semiconductor regions define electrodes of a first diode, the first diode being an avalanche diode;
- wherein the second and third semiconductor regions define electrodes of a second diode;
- and
- an inductive element coupled to an electrode of the second diode.
A device for common mode filtering and protection against electrostatic discharges, the device comprising:
- a first circuit comprising:
- a first electronic component comprising:
- first and second semiconductor regions;
- and
- a third semiconductor region arranged under the first and second semiconductor regions and further extending between the first and second semiconductor regions to separate the first semiconductor region from the second semiconductor region;
- wherein the first and third semiconductor regions define electrodes of a first diode, the first diode being an avalanche diode;
- and
- wherein the second and third semiconductor regions define electrodes of a second diode;
- and
- a first inductive element coupled to an electrode of the second diode;
- and
- a second circuit comprising:
- a second electronic component comprising:
- fourth and fifth semiconductor regions;
- and
- a sixth semiconductor region arranged under the fourth and fifth semiconductor regions and further extending between the fourth and fifth semiconductor regions to separate the fourth semiconductor region from the fifth semiconductor region;
- wherein the fourth and sixth semiconductor regions define electrodes of a third diode, the third diode being an avalanche diode;
- and
- wherein the fifth and sixth semiconductor regions define electrodes of a fourth diode;
- and
- a second inductive element coupled to an electrode of the fourth diode;
- wherein the first and second inductive elements are mutually magnetically coupled.
Dependencies are inferred from the claim text.