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US 2019/0296005 A1Published application
Protection against electrostatic discharges and filtering
AssigneeSTMicroelectronics (Tours) SAS
InventorPatrick POVEDA
Life of this patent
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Abstract
An electronic component includes first and second separate semiconductor regions. A third semiconductor region is arranged under and between the first and second semiconductor regions. The first and third semiconductor regions define electrodes of a first diode. The second and third semiconductor regions define electrodes of a second diode. The first diode is an avalanche diode.
Claims21
An electronic component, comprising:
- first and second semiconductor regions;
- and
- a third semiconductor region arranged under the first and second semiconductor regions and further extending between the first and second semiconductor regions to separate the first semiconductor region from the second semiconductor region;
- wherein the first and third semiconductor regions define electrodes of a first diode, the first diode being an avalanche diode;
- and
- wherein the second and third semiconductor regions define electrodes of a second diode.
3 more elements
A device for common mode filtering and protection against electrostatic discharges, the device comprising:
- a first circuit comprising:
- a first electronic component comprising:
- first and second semiconductor regions;
- and
- a third semiconductor region arranged under the first and second semiconductor regions and further extending between the first and second semiconductor regions to separate the first semiconductor region from the second semiconductor region;
- wherein the first and third semiconductor regions define electrodes of a first diode, the first diode being an avalanche diode;
- and
- wherein the second and third semiconductor regions define electrodes of a second diode;
- and
- a first inductive element coupled to an electrode of the second diode;
- and
- a second circuit comprising:
- a second electronic component comprising:
- fourth and fifth semiconductor regions;
- and
- a sixth semiconductor region arranged under the fourth and fifth semiconductor regions and further extending between the fourth and fifth semiconductor regions to separate the fourth semiconductor region from the fifth semiconductor region;
- wherein the fourth and sixth semiconductor regions define electrodes of a third diode, the third diode being an avalanche diode;
- and
- wherein the fifth and sixth semiconductor regions define electrodes of a fourth diode;
- and
- a second inductive element coupled to an electrode of the fourth diode;
- wherein the first and second inductive elements are mutually magnetically coupled.
19 more elements
Dependencies are inferred from the claim text.