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US 11,018,023 B2Granted
Defect reduction of semiconductor layers and semiconductor devices by anneal and related methods
AssigneeSemiconductor Components Industries, LLC
InventorAli Salih
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Abstract
Systems and methods of the disclosed embodiments include reducing defects in a semiconductor layer. The defects may be reduced by forming the semiconductor layer on a substrate, removing at least a portion the substrate from an underside of the semiconductor layer, and annealing the semiconductor layer to reduce the defects in the layer. The annealing includes focusing energy at the layer.
Claims8
A semiconductor device, comprising:
- a semiconductor layer comprising a gallium nitride (GaN) layer or an aluminum-GaN layer, within which structural defects caused by growing the semiconductor layer on a substrate are reduced throughout the entire thickness of the semiconductor layer as a result of annealing by focused energy with at least some of the substrate removed;
- a back metal directly contacting and supporting the semiconductor layer;
- a drain coupled to a first surface of the semiconductor layer and connected to a first electrode;
- and
- a source coupled to the semiconductor layer and connected to a second electrode on a second surface opposite the first surface of the semiconductor layer;
- a gate coupled to the first surface of the semiconductor layer;
- and
- wherein the drain, source, and gate are isolated from each other and provide a transistor device structure.
5 more elements
Dependencies are inferred from the claim text.