H10D 30/6734
Having gate electrodes arranged on both top and bottom sides of the
Official title: {having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs}
H10D30/6734 (Having gate electrodes arranged on both top and bottom sides of the) appears on 2,744 US grants and 3,126 published applications in this corpus.
Search patents in H10D- Granted patents
- 2,744
- Published applications
- 3,126
- Assignees
- 377
- Inventors
- 3,033
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 3 | 0 |
| 1989 | 0 | 0 |
| 1990 | 2 | 0 |
| 1991 | 10 | 0 |
| 1992 | 7 | 0 |
| 1993 | 11 | 0 |
| 1994 | 16 | 0 |
| 1995 | 12 | 0 |
| 1996 | 18 | 0 |
| 1997 | 20 | 0 |
| 1998 | 22 | 0 |
| 1999 | 13 | 0 |
| 2000 | 21 | 0 |
| 2001 | 20 | 15 |
| 2002 | 38 | 45 |
| 2003 | 39 | 43 |
| 2004 | 44 | 48 |
| 2005 | 37 | 70 |
| 2006 | 44 | 59 |
| 2007 | 46 | 59 |
| 2008 | 46 | 60 |
| 2009 | 48 | 44 |
| 2010 | 48 | 39 |
| 2011 | 32 | 75 |
| 2012 | 33 | 75 |
| 2013 | 65 | 61 |
| 2014 | 86 | 96 |
| 2015 | 98 | 158 |
| 2016 | 148 | 203 |
| 2017 | 188 | 272 |
| 2018 | 214 | 203 |
| 2019 | 219 | 177 |
| 2020 | 175 | 211 |
| 2021 | 145 | 215 |
| 2022 | 156 | 237 |
| 2023 | 151 | 214 |
| 2024 | 199 | 163 |
| 2025 | 167 | 165 |
| 2026 | 99 | 119 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- MOSFET and memory cell having improved drain current through back bias application6 Oct 2026US 12,757,460 B2Zeno Semiconductor, Inc.
- Vertical thin film transistor with dual gate electrodes29 Sep 2026US 12,751,073 B2Solsona Enterprise, LLC
- Organic light emitting diode display device including vertically stacked electrodes on driving transistor8 Sep 2026US 12,731,540 B2Samsung Display Co., Ltd.
- Semiconductor device and manufacturing method thereof8 Sep 2026US 12,733,233 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Single process double gate and variable threshold voltage MOSFET25 Aug 2026US 12,720,793 B2International Business Machines Corporation
- Display device8 Oct 2026US 2026/0311650 A1Samsung Display Co., Ltd.
- Semiconductor device8 Oct 2026US 2026/0311745 A1Semiconductor Energy Laboratory Co.Ltd.
- Dual Gate Thin Film Transistor and Display Apparatus with the Same8 Oct 2026US 2026/0313966 A1LG Display Co., Ltd.
- Semiconductor device and manufacturing method of the same8 Oct 2026US 2026/0313974 A1Semiconductor Energy Laboratory Co.Ltd.
- Semiconductor device and manufacturing method thereof8 Oct 2026US 2026/0314009 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Semiconductor device4,046US 7,297,977 B2Hewlett-Packard Development Company, L. P. · 2007
- Combined binary oxide semiconductor device3,995US 7,282,782 B2Hewlett-Packard Development Company, L. P. · 2007
- Indium oxide-based thin film transistors and circuits3,962US 7,211,825 B22007
- Transistor using an isovalent semiconductor oxide as the active channel layer3,960US 7,462,862 B2Hewlett-Packard Development Company, L. P. · 2008
- MOSFET having a double gate1,461US 6,646,307 B1Advanced Micro Devices, Inc. · 2003