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US 7,462,862 B2Granted
Transistor using an isovalent semiconductor oxide as the active channel layer
AssigneeHewlett-Packard Development Company, L.P.
InventorsRandy L. Hoffman, Gregory S. Herman
Life of this patent
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Abstract
A semiconductor device can include a channel including an oxide comprising a combination of isovalent cations selected from within the D block and the P block of the Periodic Table.
Claims30
A semiconductor device, comprising:
- a drain electrode;
- a source electrode;
- means for a channel to electrically couple the drain electrode and the source electrode, the means comprising an isovalent semiconductor film including indium gallium oxide;
- a gate electrode;
- and
- a gate dielectric positioned between the gate electrode and the channel.
3 more elements
A display device, comprising:
- a plurality of display elements configured to operate collectively to display images, where each of the display elements includes a semiconductor device configured to control light emitted by the display element, the semiconductor device including:
- a drain electrode;
- a source electrode;
- an isovalent semiconductor channel contacting the drain electrode and the source electrode, wherein the channel includes an oxide comprising a combination of isovalent cations selected from within the P block of the Periodic Table;
- a gate electrode;
- and
- a gate dielectric positioned between the gate electrode and the channel and configured to permit application of an electric field to the channel.
4 more elements
A semiconductor device, comprising:
- a drain electrode;
- a source electrode;
- a channel contacting the drain electrode and the source electrode, wherein the channel includes an oxide comprising a combination of isovalent cations selected from within the D block and the P block of the Periodic Table;
- a gate electrode;
- and
- a gate dielectric positioned between the gate electrode and the channel;
- wherein the combination comprises indium gallium oxide and wherein the indium gallium oxide has an atomic ratio of In/(In+Ga) of greater than about 0.5.
4 more elements
A semiconductor device, comprising:
- a drain electrode;
- a source electrode;
- a channel contacting the drain electrode and the source electrode, wherein the channel includes an oxide comprising a combination of isovalent cations selected from within the D block and the P block of the Periodic Table;
- a gate electrode;
- and
- a gate dielectric positioned between the gate electrode and the channel;
- wherein the combination is selected from a group consisting of:
- tin titanium oxide;
- tin germanium oxide;
- and
- tin titanium germanium oxide.
8 more elements
A semiconductor device, comprising:
- a drain electrode;
- a source electrode;
- a channel contacting the drain electrode and the source electrode, wherein the channel includes an oxide comprising a combination of isovalent cahions selected from within the D block and the P block of the Periodic Table;
- a gate electrode;
- and
- a gate dielectric positioned between the gate electrode and the channel, wherein the combination comprises tin oxide and a second 4+ cation selected from within the D block and the P block of the Periodic Table.
3 more elements
A semiconductor device, comprising:
- a drain electrode;
- a source electrode;
- an isovalent semiconductor channel contacting the drain electrode and the source electrode, wherein the channel includes an oxide-comprising a combination of isovalent cations selected from within the D block and the P block of the Periodic Table and wherein the combination comprises indium gallium oxide;
- a gate electrode;
- and
- a gate dielectric positioned between the gate electrode and the channel.
3 more elements
A semiconductor device, comprising:
- a drain electrode;
- a source electrode;
- an isovalent semiconductor channel contacting the drain electrode and the source electrode, wherein the channel includes an oxide-comprising a combination of isovalent cations selected from within the P block of the Periodic Table;
- a gate electrode;
- and
- a gate dielectric positioned between the gate electrode and the channel.
3 more elements
Dependencies are inferred from the claim text.