H10D 30/477
Vertical hemts or vertical hhmts
Official title: {Vertical HEMTs or vertical HHMTs}
H10D30/477 (Vertical hemts or vertical hhmts) appears on 327 US grants and 417 published applications in this corpus.
Search patents in H10D- Granted patents
- 327
- Published applications
- 417
- Assignees
- 153
- Inventors
- 643
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 1 |
| 2003 | 0 | 0 |
| 2004 | 1 | 1 |
| 2005 | 0 | 4 |
| 2006 | 3 | 5 |
| 2007 | 2 | 3 |
| 2008 | 2 | 7 |
| 2009 | 4 | 4 |
| 2010 | 2 | 10 |
| 2011 | 2 | 11 |
| 2012 | 8 | 13 |
| 2013 | 12 | 22 |
| 2014 | 17 | 17 |
| 2015 | 19 | 39 |
| 2016 | 31 | 24 |
| 2017 | 24 | 27 |
| 2018 | 25 | 32 |
| 2019 | 23 | 20 |
| 2020 | 25 | 33 |
| 2021 | 21 | 27 |
| 2022 | 26 | 29 |
| 2023 | 15 | 35 |
| 2024 | 23 | 24 |
| 2025 | 28 | 13 |
| 2026 | 13 | 16 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Nitride-based semiconductor device and method for manufacturing the same25 Aug 2026US 12,720,792 B2Innoscience (Suzhou) Technology Co., Ltd.
- Vertical field effect transistor including channel having GaN and AIGaN regions14 Jul 2026US 12,684,801 B2Robert Bosch GmbH
- Double gate transistor device and method of operating30 Jun 2026US 12,671,412 B2Infineon Technologies Austria AG
- Nitride semiconductor device9 Jun 2026US 12,652,819 B2Guangdong Zhineng Technologies, Co. Ltd.
- Vertical fin-based field effect transistor (FinFET) with connected fin tips7 Apr 2026US 12,598,805 B2Semiconductor Components Industries, LLC
- Double gate transistor device and method of operating1 Oct 2026US 2026/0303088 A1Infineon Technologies Austria AG
- Vertical gan moshemts with improved performance structures13 Aug 2026US 2026/0239656 A1Mosel Vitelic, Inc.
- Gallium nitride-semiconductor device with vertical jfet and lateral hemt25 Jun 2026US 2026/0181938 A1
- Nitride semiconductor device18 Jun 2026US 2026/0173432 A1Panasonic Holdings Corporation
- Vertical hemt and a method to produce a vertical hemt18 Jun 2026US 2026/0173433 A1Epinovatech AB
Most cited
By later US patents
- Enhancement mode III-N HEMTs96US 8,519,438 B2Transphorm Inc. · 2013
- Semiconductor devices having a hybrid channel layer, current aperture transistors and methods of fabricating same87US 7,084,441 B2Cree, Inc. · 2006
- Vertical transistor with uniform bottom spacer formed by selective oxidation43US 9,741,626 B1International Business Machines Corporation · 2017
- GaN-based field effect transistor of a normally-off type42US 7,038,253 B2Furukawa Electric Co., Ltd. · 2006
- Group III nitride semiconductor device29US 7,211,839 B2Kabushiki Kaisha Toyota Chuo Kenkyusho · 2007