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US 12,671,412 B2Granted
Double gate transistor device and method of operating
AssigneeInfineon Technologies Austria AG
InventorsMarkus Bina, Jens Barrenscheen, Anton Mauder
Life of this patent
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Abstract
In accordance with an embodiment, a method includes switching on a transistor device by generating a first conducting channel by driving a first gate electrode and, before generating the first conducting channel, generating a second conducting channel by driving a second gate electrode, wherein the second gate electrode is adjacent the first gate electrode in a current flow direction of the transistor device.
Claims18
A transistor device comprising:
- at least one transistor cell comprising:
- a drift region, a body region, a source region and a drain region, wherein the body region is arranged between the source region and the drift region, and wherein the drift region is arranged between the body region and the drain region;
- a first gate electrode dielectrically insulated from the body region by a first gate dielectric;
- and
- a second gate electrode,
- wherein the second gate electrode is dielectrically insulated from the body region by a second gate dielectric, arranged adjacent the first gate electrode, and separated from the first gate electrode by a first separation layer;
- and
- a second separation layer located between the first gate electrode and the second gate electrode, wherein the second separation layer is oriented in a different direction than the first separation layer, and wherein the second separation layer is thicker than the first gate dielectric and the second gate dielectric.
5 more elements
A transistor device comprising a plurality of transistor cells, each transitor cell comprising:
- a drift region, a body region, a source region and a drain region, wherein the body region is arranged between the source region and the drift region, and wherein the drift region is arranged between the body region and the drain region;
- a first gate electrode dielectrically insulated from the body region by a first gate dielectric;
- and
- a second gate electrode,
- wherein the second gate electrode is dielectrically insulated from the body region by a second gate dielectric, arranged adjacent the first gate electrode, and separated from the first gate electrode by a first separation layer;
- and
- a second separation layer located between the first gate electrode and the second gate electrode, wherein the second separation layer is oriented in a different direction than the first separation layer, wherein the second separation layer is thicker than the first gate dielectric and the second gate dielectric,
- wherein each of the plurality of transistor cells has its respective source region connected to a source node common to the plurality of transistor cells,
- wherein each of the plurality of transistor cells has its respective first gate electrode connected to a first gate node common to the plurality of transistor cells, and
- wherein each of the plurality of transistor cells has its respective second gate electrode connected to a second gate node common to the plurality of transistor cells.
7 more elements
A transistor device comprising:
- at least one transistor cell comprising:
- a drift region, a body region, a source region and a drain region, wherein the body region is arranged between the source region and the drift region, and wherein the drift region is arranged between the body region and the drain region;
- a first gate electrode dielectrically insulated from the body region by a first gate dielectric;
- and
- a second gate electrode,
- wherein the second gate electrode is dielectrically insulated from the body region by a second gate dielectric, arranged adjacent the first gate electrode, and separated from the first gate electrode by a first separation layer;
- a channel region;
- and
- a second separation layer located between the first gate electrode and the second gate electrode, wherein the second separation layer is oriented in a different direction than the first separation layer, and wherein the second separation layer is thicker than the first gate dielectric and the second gate dielectric.
6 more elements
Dependencies are inferred from the claim text.