Nitride semiconductor device

A semiconductor device, comprising:

• a first channel layer, which comprises a first channel region, a first gate doped region, and a second channel region, wherein the second channel region is located above the first channel region, and the first gate doped region is located between the first channel region and the second channel region;
• a first barrier layer, wherein a first heterojunction having a vertical interface is formed between the first channel layer and the first barrier layer, and a vertical 2DEG or 2DHG is formed in the first heterojunction;
• a first electrode, which is located below the first gate doped region and in electric contact with the 2DEG or 2DHG in the first heterojunction;
• a second electrode, which is located above the first gate doped region and in electric contact with the 2DEG or 2DHG in the first heterojunction;
• and
• a third electrode, which is in electric contact, in the first gate doped region, with the 2DEG or 2DHG in the first heterojunction;
• a second channel layer, which comprises a third channel region, a second gate doped region, and a fourth channel region, wherein the fourth channel region is located above the third channel region, and the second gate doped region is located between the third channel region and the fourth channel region;
• a third barrier laver, wherein a third heterojunction having a vertical interface is formed between the second channel layer and the third barrier layer, and a vertical 2DEG or 2DHG is formed in the third heterojunction;
• a fifth electrode, which is located below the second gate doped region and in electric contact with the 2DEG or 2DHG in the third heterojunction;
• and
• a sixth electrode, which is located above the second gate doped region and in electric contact with the 2DEG or 2DHG in the third heterojunction;
• wherein
• the third electrode is in electric contact, in the second gate doped region, with the 2DEG or 2DHG in the third heterojunction.