Nitride semiconductor device

Abstract

A nitride semiconductor device includes: a substrate; a first nitride semiconductor layer above the substrate; and a second nitride semiconductor layer covering a trench provided in the first nitride semiconductor layer. When a location of the trench where the trench extends in a first direction parallel to an off-direction of the substrate is defined as a first location, and a location of the trench where the trench extends in a second direction perpendicular to the off-direction of the substrate is defined as a second location, a cross-sectional area, orthogonal to the second direction, of the trench at the second location is smaller than a cross-sectional area, orthogonal to the first direction, of the trench at the first location.

Dependencies are inferred from the claim text.